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Description:

In this study, we systematically investigated the effects of S termination by (NH4)2Sx treatment on enhancement of the photoluminescence (PL) properties of buried InGaAs/GaAs(001) quantum wells (QWs). X-ray photoelectron spectroscopy (XPS) and PL measurements revealed that the (NH4)2Sx treatment suppresses the formation of surface oxides, especially arsenic oxides, and enhances the PL intensity of QWs. Clear correlation between the PL and XPS results suggest that greater PL intensity is attributable to a reduction in the number of nonradiative recombination centers at the surface caused by arsenic oxide formation.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: GaAs , Sulfur, Termination, Oxide, Photoluminescence

Date published: 2024-12-02

Publisher: IOP Publishing

Journal:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 63 issue. 12 121002

Funding:

• Innovative Science and Technology Initiative for Security JPJ004596

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.35848/1347-4065/ad9802

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Updated at: 2025-02-06 12:31:18 +0900

Published on MDR: 2025-02-06 12:31:18 +0900