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説明:

In this study, we systematically investigated the effects of S termination by (NH4)2Sx treatment on enhancement of the photoluminescence (PL) properties of buried InGaAs/GaAs(001) quantum wells (QWs). X-ray photoelectron spectroscopy (XPS) and PL measurements revealed that the (NH4)2Sx treatment suppresses the formation of surface oxides, especially arsenic oxides, and enhances the PL intensity of QWs. Clear correlation between the PL and XPS results suggest that greater PL intensity is attributable to a reduction in the number of nonradiative recombination centers at the surface caused by arsenic oxide formation.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: GaAs , Sulfur, Termination, Oxide, Photoluminescence

刊行年月日: 2024-12-02

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 63 issue. 12 121002

研究助成金:

• Innovative Science and Technology Initiative for Security JPJ004596

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.35848/1347-4065/ad9802

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更新時刻: 2025-02-06 12:31:18 +0900

MDRでの公開時刻: 2025-02-06 12:31:18 +0900