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説明:

Great suppression of fine-structure splitting (FSS) is demonstrated in self-assembled GaAs quantum dots (QDs) grown on AlGaAs(111)A surface. Due to the three-fold rotational symmetry of the growth plane, highly symmetric excitons with significantly reduced FSS are achieved. Scanning tunneling microscopy and cross-sectional transmission microscopy demonstrate a laterally symmetric dot shape with abrupt interface. Polarized photoluminescence spectra confirm excitonic transition with FSS smaller than ~20μeV, a substantial reduction from that of QDs grown on (100).

権利情報:

• Creative Commons BY Attribution 4.0 International
  https://openpolicyfinder.jisc.ac.uk/id/publication/16994 参照

キーワード: GaAs, Quantum Dot, Droplet Epitaxy, Entanglement, (111)A, Molecular Beam Epitaxy, Fine Structure Splitting

刊行年月日: 2010-05-28

出版者: IOP Publishing

掲載誌:

• Applied Physics Express (ISSN: 18820786) vol. 3 issue. 6 p. 65203-

研究助成金:

• 日本学術振興会 22710107 (GaAs(111)面上高対称性量子ドットの自己形成に関する研究 若手研究(B))

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1143/apex.3.065203

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更新時刻: 2025-12-08 16:30:04 +0900

MDRでの公開時刻: 2025-12-08 16:24:14 +0900