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Great suppression of fine-structure splitting (FSS) is demonstrated in self-assembled GaAs quantum dots (QDs) grown on AlGaAs(111)A surface. Due to the three-fold rotational symmetry of the growth plane, highly symmetric excitons with significantly reduced FSS are achieved. Scanning tunneling microscopy and cross-sectional transmission microscopy demonstrate a laterally symmetric dot shape with abrupt interface. Polarized photoluminescence spectra confirm excitonic transition with FSS smaller than ~20μeV, a substantial reduction from that of QDs grown on (100).

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• Creative Commons BY Attribution 4.0 International
  

  https://openpolicyfinder.jisc.ac.uk/id/publication/16994 参照

Keyword: GaAs, Quantum Dot, Droplet Epitaxy, Entanglement, (111)A, Molecular Beam Epitaxy, Fine Structure Splitting

Date published: 2010-05-28

Publisher: IOP Publishing

Journal:

• Applied Physics Express (ISSN: 18820786) vol. 3 issue. 6 p. 65203-

Funding:

• 日本学術振興会 22710107 (GaAs(111)面上高対称性量子ドットの自己形成に関する研究 若手研究(B))

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1143/apex.3.065203

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Updated at: 2025-12-08 16:30:04 +0900

Published on MDR: 2025-12-08 16:24:14 +0900