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Highly-oriented MoS2 monolayer (ML) on the sapphire(0001) substrate were grown by metal-organic chemical vapor deposition. The epitaxial configuration of ML- MoS2/sapphire has been studied using low-energy electron diffraction (LEED) combined with first-principles calculations. LEED analysis based on the dynamical diffraction theory revealed that the MoS2 ML is grown with the epitaxial relationship of MoS2 [1120] // Al2O3 [1120] and MoS2 [1100] // Al2O3 [1100], and that the formation of antiparallel (inversion) domains is effectively suppressed. The observed epitaxial relationship is insensitive to the direction of surface steps on the sapphire substrate.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: transition-metal dichalcogenide, low-energy electron diffraction, epitaxial growth

刊行年月日: 2026-01-14

出版者: AIP Publishing

掲載誌:

• Journal of Applied Physics (ISSN: 00218979) vol. 139 issue. 2 024303

研究助成金:

• Japan Society for the Promotion of Science JP23K04592
• Core Research for Evolutional Science and Technology JPMJCR24A3

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0303598

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更新時刻: 2026-01-14 13:07:15 +0900

MDRでの公開時刻: 2026-01-14 16:22:15 +0900