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The epitaxy of high-quality hexagonal boron nitride (hBN) multilayers on dielectric wafers is essential for hBN applications but remains challenging. Herein, highly-oriented hBN multilayers grown on single-crystal aluminum nitride (AlN)—AlN on sapphire and bulk AlN substrates—via metalorganic vapor phase epitaxy and high-temperature annealing is reported. Hexagonal AlN (0001) not only provides a crystallographically commensurate base for hBN epitaxy but is thermally stable for hBN annealing up to 1800°C, enabling the first instance of large-area multilayer hBN with both superior out-of-plane and in-plane alignments grown directly on dielectrics using a fully industry-compatible approach. Elevated temperatures also reduce carbon and allow control over the separation of related single photon emission centers in hBN. These centers exhibited a record-narrow wavelength distribution (578 ± 5 nm) with small zero-phonon linewidths down to 1.44 meV, indicating the high uniformity of the achieved multilayer hBN films. This work paves an industry-compatible way towards producing highly-oriented homogeneous hBN multilayers on dielectrics, promising for future device and integration applications.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Epitaxial BN layers

刊行年月日: 2025-09-29

出版者: Wiley

掲載誌:

• Advanced Science (ISSN: 21983844) vol. 12 issue. 46 e09354

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/advs.202509354

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更新時刻: 2025-12-15 13:40:58 +0900

MDRでの公開時刻: 2025-12-18 19:08:21 +0900