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説明:

Surface morphology in molecular-beam epitaxy of InAs(001), (111)A, and (111)B has been studied using scanning tunneling microscopy. The surface morphologies of InAs strongly depend on the substrate temperature, the substrate orientation, and the As/In flux ratio. The size and density of two-dimensional InAs islands on the (001) surface decreases and increases, respectively, as the As/In flux ratio is increased. On the other hand, the island size (density) is increased (decreased) with increasing the As flux on the (111)A and (111)B surface. Surface reconstructions on the growing surface strongly affect the diffusion and incorporation kinetics of In atoms, resulting in the observed surface morphologies.

権利情報:

• In Copyright
  

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Akihiro Ohtake, Takuya Kawazu, Takaaki Mano; Arsenic-flux dependence of surface morphology in InAs homoepitaxy. J. Vac. Sci. Technol. A 1 December 2024; 42 (6): 062702 and may be found at https://doi.org/10.1116/6.0003957

キーワード: surface reconstructions, molecular beam epitaxy, scanning tunneling microscopy, III-V semiconductors

刊行年月日: 2024-12-01

出版者: American Institute of Physics

掲載誌:

• JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (ISSN: 07342101) vol. 42 issue. 6 062702

研究助成金:

• 日本学術振興会 JP23K04592.

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4772

公開URL: https://doi.org/10.1116/6.0003957

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更新時刻: 2024-09-25 16:30:51 +0900

MDRでの公開時刻: 2024-09-25 16:30:51 +0900