Article Arsenic-flux dependence of surface morphology in InAs homoepitaxy

Akihiro Ohtake SAMURAI ORCID (Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Epitaxial Structures Group, National Institute for Materials ScienceROR) ; Takuya Kawazu SAMURAI ORCID (Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Epitaxial Structures Group, National Institute for Materials ScienceROR) ; Takaaki Mano SAMURAI ORCID (Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Epitaxial Structures Group, National Institute for Materials ScienceROR)

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Akihiro Ohtake, Takuya Kawazu, Takaaki Mano. Arsenic-flux dependence of surface morphology in InAs homoepitaxy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 2024, 42 (6), 062702. https://doi.org/10.1116/6.0003957
SAMURAI

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(abstract)

Surface morphology in molecular-beam epitaxy of InAs(001), (111)A, and (111)B has been studied using scanning tunneling microscopy. The surface morphologies of InAs strongly depend on the substrate temperature, the substrate orientation, and the As/In flux ratio. The size and density of two-dimensional InAs islands on the (001) surface decreases and increases, respectively, as the As/In flux ratio is increased. On the other hand, the island size (density) is increased (decreased) with increasing the As flux on the (111)A and (111)B surface. Surface reconstructions on the growing surface strongly affect the diffusion and incorporation kinetics of In atoms, resulting in the observed surface morphologies.

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    This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Akihiro Ohtake, Takuya Kawazu, Takaaki Mano; Arsenic-flux dependence of surface morphology in InAs homoepitaxy. J. Vac. Sci. Technol. A 1 December 2024; 42 (6): 062702 and may be found at https://doi.org/10.1116/6.0003957

Keyword: surface reconstructions, molecular beam epitaxy, scanning tunneling microscopy, III-V semiconductors

Date published: 2024-12-01

Publisher: American Institute of Physics

Journal:

  • JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (ISSN: 07342101) vol. 42 issue. 6 062702

Funding:

  • 日本学術振興会 JP23K04592.

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4772

First published URL: https://doi.org/10.1116/6.0003957

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Updated at: 2024-09-25 16:30:51 +0900

Published on MDR: 2024-09-25 16:30:51 +0900

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