[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
- Magazine
- Collection
- Research Highlights
- Creator
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)National Institute for Materials Science
- Keyword
- GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
- Date published
- 2021-07-13
- Updated at
- 2023-12-26 21:38:08 +0900
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
- Journal article
- Creator
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;Shigefusa F. Chichibu (author) (Search by this author)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Kohei Shima (author) (Search by this author)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Akira Uedono (author) (Search by this author)Department of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;Shoji Ishibashi (author) (Search by this author)AIST;Hiroko Iguchi (author) (Search by this author)TOYOTA CENTRAL R&D LABS., INC.;Tetsuo Narita (author) (Search by this author)TOYOTA CENTRAL R&D LABS., INC.;Keita Kataoka (author) (Search by this author)TOYOTA CENTRAL R&D LABS., INC.;Ryo Tanaka (author) (Search by this author)Fuji Electric Corporation;Shinya Takashima (author) (Search by this author)Fuji Electric Corporation;Katsunori Ueno (author) (Search by this author)Fuji Electric Corporation;Masaharu Edo (author) (Search by this author)Fuji Electric Corporation;Hirotaka Watanabe (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Atsushi Tanaka (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Yoshio Honda (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Jun Suda (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Hiroshi Amano (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Tetsu Kachi (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya UniversityToshihide Nabatame (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
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Yoshihiro Irokawa (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
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Yasuo Koide (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
- Keyword
- GaN
- Date published
- 2024-05-14
- Updated at
- 2024-05-09 16:30:16 +0900
Heat transport exploration through the GaN/diamond interfaces using machine learning potential
- Journal article
- Creator
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;Zhanpeng Sun (author) (Search by this author);Yunfei Song (author) (Search by this author);Zijun Qi (author) (Search by this author);Xiang Sun (author) (Search by this author)Meiyong Liao (author) (Search by this author)National Institute for Materials Science
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;Rui Li (author) (Search by this author)Qijun Wang (author) (Search by this author)
https://orcid.org/0000-0002-4299-3798
(unauthenticated)
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;Lijie Li (author) (Search by this author)Gai Wu (author) (Search by this author)
https://orcid.org/0000-0002-9726-6328
(unauthenticated)
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;Wei Shen (author) (Search by this author)Sheng Liu (author) (Search by this author) - Keyword
- thermal conductivity, GaN, Diamond
- Date published
- 2025-01-16
- Updated at
- 2025-04-22 12:30:10 +0900
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
- Journal article
- Creator
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Yoshihiro Irokawa (author) (Search by this author)National Institute for Materials Science
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Toshihide Nabatame (author) (Search by this author)National Institute for Materials Science
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;Tomomi Sawada (author) (Search by this author)National Institute for Materials Science;Manami Miyamoto (author) (Search by this author);Hiromi Miura (author) (Search by this author)Kazuhito Tsukagoshi (author) (Search by this author)National Institute for Materials Science
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Yasuo Koide (author) (Search by this author)National Institute for Materials Science
- Keyword
- GaN
- Date published
- 2024-08-01
- Updated at
- 2024-09-02 12:30:27 +0900
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
- Journal article
- Creator
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;Akihiro Shimada (author) (Search by this author);Haruna Shiomi (author) (Search by this author)Tetsuya Tohei (author) (Search by this author)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
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Yusuke Hayashi (author) (Search by this author)
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;Masaya Yamaguchi (author) (Search by this author)Junpei Yamamoto (author) (Search by this author)
https://orcid.org/0009-0007-5684-0569
(unauthenticated)
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Takeaki Hamachi (author) (Search by this author)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
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Yasuhiko Imai (author) (Search by this author)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
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;Kazushi Sumitani (author) (Search by this author)Shigeru Kimura (author) (Search by this author)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
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Shota Kaneki (author) (Search by this author)
https://orcid.org/0000-0003-0806-8571
(unauthenticated)
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Tamotsu Hashizume (author) (Search by this author)
https://orcid.org/0009-0004-8229-9460
(unauthenticated)
;
Akira Sakai (author) (Search by this author)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- Keyword
- GaN, HEMT, Strain, In situ
- Date published
- 2025-08-21
- Updated at
- 2025-08-23 08:30:23 +0900
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
- Journal article
- Creator
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Shunsuke Yamashita (author) (Search by this author)
https://orcid.org/0000-0003-1702-1708
(unauthenticated)
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;Sei Fukushima (author) (Search by this author)Jun Kikkawa (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
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;Ryoji Arai (author) (Search by this author)Yuya Kanitani (author) (Search by this author)
https://orcid.org/0009-0002-2154-5571
(unauthenticated)
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Koji Kimoto (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
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Yoshihiro Kudo (author) (Search by this author)
- Keyword
- defect, GaN, EELS, 4D-STEM, HAADF-STEM, ABF-STEM, HAXPES
- Date published
- 2024-03-01
- Updated at
- 2024-03-19 16:56:29 +0900
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
- Journal article
- Creator
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Masataka Imura (author) (Search by this author)National Institute for Materials Science
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Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
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Takaaki Mano (author) (Search by this author)National Institute for Materials Science
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;Yuri Itokazu (author) (Search by this author)Masafumi Jo (author) (Search by this author)
- Keyword
- MOVPE, GaN, InN, InGaN, XRD, Superlattice
- Date published
- 2026-03-21
- Updated at
- 2026-04-03 09:31:08 +0900
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
- Journal article
- Creator
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Takahiro Nagata (author) (Search by this author)
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Asahiko Matsuda (author) (Search by this author)
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Takashi Teramoto (author) (Search by this author)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
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Dominic Gerlach (author) (Search by this author)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
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Peng Shen (author) (Search by this author)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
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Shigenori Ueda (author) (Search by this author)
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Takako Kimura (author) (Search by this author)
https://orcid.org/0009-0007-0109-4482
(unauthenticated)
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Christian Dussarrat (author) (Search by this author)
https://orcid.org/0009-0000-1063-6473
(unauthenticated)
;
Toyohiro Chikyow (author) (Search by this author)
- Keyword
- gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
- Date published
- 2025-03-07
- Updated at
- 2025-03-26 17:26:31 +0900
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
- Journal article
- Creator
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色川 芳宏 (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
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大井 暁彦 (author) (Search by this author)Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit, National Institute for Materials Science
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生田目 俊秀 (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group, National Institute for Materials Science
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小出 康夫 (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
- Keyword
- GaN, hydrogen, Schottky barrier height
- Date published
- 2024-04-01
- Updated at
- 2024-04-10 16:30:21 +0900
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
- Journal article
- Creator
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Masahiro Hara (author) (Search by this author)
https://orcid.org/0000-0001-9748-8011
(unauthenticated)
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Toshihide Nabatame (author) (Search by this author)
;
Yoshihiro Irokawa (author) (Search by this author)
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;Tomomi Sawada (author) (Search by this author);Manami Miyamoto (author) (Search by this author);Hiromi Miura (author) (Search by this author);Tsunenobu Kimoto (author) (Search by this author)Yasuo Koide (author) (Search by this author)
- Keyword
- GaN
- Date published
- 2025-05-07
- Updated at
- 2025-05-08 12:30:16 +0900