17 records found.
Materials issues and devices of α- and β-Ga2O3
- Journal article
- Creator
-
;Elaheh Ahmadi (author) (Search by this author)Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, power device, epitaxy
- Date published
- 2019-10-28
- Updated at
- 2024-01-29 15:08:11 +0900
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3
- Journal article
- Creator
-
Lewis T. Penman (author) (Search by this author)
https://orcid.org/0000-0002-0147-9995
(unauthenticated)
;
;Zak M. Johnston (author) (Search by this author)Paul R. Edwards (author) (Search by this author)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
;
;Clifford McAleese (author) (Search by this author)Piero Mazzolini (author) (Search by this author)
https://orcid.org/0000-0003-2092-5265
(unauthenticated)
;
Matteo Bosi (author) (Search by this author)
https://orcid.org/0000-0001-8992-0249
(unauthenticated)
;
Luca Seravalli (author) (Search by this author)
https://orcid.org/0000-0003-2784-1785
(unauthenticated)
;
;Roberto Fornari (author) (Search by this author)Robert W. Martin (author) (Search by this author)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C.‐P. Massabuau (author) (Search by this author)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- Keyword
- Ga2O3
- Date published
- 2025-02-12
- Updated at
- 2025-08-18 16:30:52 +0900
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, etching, HCl
- Date published
- 2023-04-17
- Updated at
- 2024-05-29 08:30:12 +0900
Luminescence properties of dislocations in α-Ga2O3
- Journal article
- Creator
-
Mugove Maruzane (author) (Search by this author)
https://orcid.org/0009-0004-9207-0424
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
;
Olha Makydonska (author) (Search by this author)
https://orcid.org/0009-0008-5562-2137
(unauthenticated)
;
Paul R Edwards (author) (Search by this author)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Robert W Martin (author) (Search by this author)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C-P Massabuau (author) (Search by this author)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- Keyword
- Ga2O3, dislocation
- Date published
- 2025-01-20
- Updated at
- 2024-11-13 08:31:40 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
- Keyword
- Ga2O3, (-102), selective area growth, selective area etching
- Date published
- 2024-01-22
- Updated at
- 2025-01-25 12:30:12 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
;
Shiyu Xiao (author) (Search by this author)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (Search by this author);Katsuhiro Imai (author) (Search by this author)Takahiro Tomita (author) (Search by this author)
- Keyword
- Ga2O3, HVPE, Cr2O3
- Date published
- 2026-02-21
- Updated at
- 2026-02-18 16:30:15 +0900
Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH)
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, TMAH, wet etching, MEMS
- Date published
- 2025-11-01
- Updated at
- 2025-11-27 08:30:13 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Takashi Shinohe (author) (Search by this author)FLOSFIA INC.
- Keyword
- Ga2O3, dislocation, HVPE, ELO
- Date published
- 2025-05-19
- Updated at
- 2025-05-21 16:30:09 +0900
Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3
- Book
- Creator
-
大島祐一 (author) (Search by this author)Research Center for Functional Materials/Optical Materials Field/Optical Single Crystals Group, National Institute for Materials Science
- Keyword
- Ga2O3, HVPE
- Date published
- 2020-04-24
- Updated at
- 2024-01-30 10:29:29 +0900
Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Rie Togashi (author) (Search by this author)
https://orcid.org/0000-0002-9467-0755
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, forming gas, anisotropic etching, plasma-free process
- Date published
- 2024-12-31
- Updated at
- 2024-07-31 12:30:20 +0900