ライセンス: In Copyright キーワード: Ga2O3
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Materials issues and devices of α- and β-Ga2O3.pdf
Materials issues and devices of α- and β-Ga2O3
ジャーナル論文
著者
Elaheh Ahmadi (author) (この著者で検索)
;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
Ga2O3, power device, epitaxy
刊行年月日
2019-10-28
更新時刻
2024-01-29 15:08:11 +0900
nohighlight_Si-K-Ga2O3_resubmit_2403011908_revYY.pdf
Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)
ジャーナル論文
著者
Yuhua Tsai (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
ORCID ;
Yusuke Hashimoto (author) (この著者で検索)
NAIST
;
ZeXu Sun (author) (この著者で検索)
NAIST
;
Takuya Moriki (author) (この著者で検索)
NAIST
;
Takashi Tadamura (author) (この著者で検索)
NAIST
;
Takahiro Nagata (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
ORCID SAMURAI ;
Piero Mazzolini (author) (この著者で検索)
University of Parma
;
Antonella Parisini (author) (この著者で検索)
University of Parma
;
Matteo Bosi (author) (この著者で検索)
IMEM-CNR
;
Luca Seravalli (author) (この著者で検索)
IMEM-CNR
;
Tomohiro Matsushita (author) (この著者で検索)
NAIST
;
Yoshiyuki Yamashita (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
ORCID SAMURAI
キーワード
Ga2O3, κ-Ga2O3
刊行年月日
2024-04-03
更新時刻
2025-03-07 12:30:11 +0900
nohighlight_Sn_dopedGa2O3_240222_v2_revYY.pdf
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
ジャーナル論文
著者
Yuhua Tsai (author) (この著者で検索)
National Institute for Materials Science
ORCID ;
Masaaki Kobata (author) (この著者で検索)
ORCID ;
Tatsuo Fukuda (author) (この著者で検索)
ORCID ;
Hajime Tanida (author) (この著者で検索)
ORCID ;
Toru Kobayashi (author) (この著者で検索)
;
Yoshiyuki Yamashita (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
Ga2O3, dopant, b-Ga2O3
刊行年月日
2024-03-11
更新時刻
2024-03-19 12:30:20 +0900
042110_1_5.0186319.pdf
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials
ORCID SAMURAI ;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials
ORCID SAMURAI
キーワード
Ga2O3, (-102), selective area growth, selective area etching
刊行年月日
2024-01-22
更新時刻
2025-01-25 12:30:12 +0900