7 records found.
Near-vertical plasma-free HCl gas etching on (011) β-Ga2O3
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, crystallographic etching, (011)
- Date published
- 2025-01-01
- Updated at
- 2026-01-24 15:43:35 +0900
Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
- Journal article
- Creator
-
;Yuji Kato (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Yoshiko Nakayama (author) (Search by this author)National Institute for Materials Science
;
Masaki Takeguchi (author) (Search by this author)National Institute for Materials Science
;
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, Superlattice
- Date published
- 2019-06-01
- Updated at
- 2024-01-05 22:11:34 +0900
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Yuji Kato (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Yoshiko Nakayama (author) (Search by this author)National Institute for Materials Science
;
Masaki Takeguchi (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, Superlattice
- Date published
- 2018-06-01
- Updated at
- 2024-01-05 22:12:13 +0900
Epitaxial relationship of NiO on (-102) β-Ga2O3
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Shinji Nakagomi (author) (Search by this author)Faculty of Science and Engineering, Ishinomaki Senshu University
- Keyword
- Ga2O3, NiO, epitaxial relationship
- Date published
- 2023-12-01
- Updated at
- 2024-11-23 16:30:35 +0900
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, HCl gas etching
- Date published
- 2023-06-01
- Updated at
- 2024-06-15 08:30:13 +0900
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, selective area growth
- Date published
- 2022-07-01
- Updated at
- 2024-01-05 22:13:27 +0900
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, lithography
- Date published
- 2023-01-01
- Updated at
- 2024-01-24 11:20:15 +0900