Skip to Content
Toggle navigation
Home
About
Help
Contact
Login
Search MDR
Go
Search Constraints
Start Over
Filtering by:
Keyword
Ga2O3
Remove constraint Keyword: Ga2O3
« Previous |
1
-
10
of
17
|
Next »
Sort by relevance
relevance
date uploaded ▼
date uploaded ▲
date modified ▼
date modified ▲
Number of results to display per page
10 per page
10
per page
20
per page
50
per page
100
per page
View results as:
List
Gallery
Masonry
Slideshow
Search Results
High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
Description/Abstract:
High-performance β-Ga2O3-based Schottky barrier diodes (SBDs) and metal-semiconductor field-effect transistors (MESFETs) are fabricated o...
Keyword:
Ga2O3
and
Transistor
Resource Type:
Article
Author:
Qihao Zhang
,
Jiangwei Liu
,
Chunming Tu
,
Dongyuan Zhai
,
Min He
, and
Jiwu Lu
Journal:
JOURNAL OF ALLOYS AND COMPOUNDS
Date Uploaded:
04/01/2025
Epitaxial relationship of NiO on (-102) β-Ga2O3
Description/Abstract:
We investigated the epitaxial relationship of an electron-beam-evaporated NiO film on a custom-ordered (-102) β-Ga2O3 substrate with a su...
Keyword:
Ga2O3
,
NiO
, and
epitaxial relationship
Resource Type:
Article
Author:
Takayoshi Oshima
and
Shinji Nakagomi
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
23/11/2024
Luminescence properties of dislocations in α-Ga<sub>2</sub>O<sub>3</sub>
Description/Abstract:
Dislocations in epitaxial lateral overgrown α-Ga2O3 are investigated using hyperspectral cathodoluminescence spectroscopy. The dislocati...
Keyword:
Ga2O3
and
dislocation
Resource Type:
Article
Author:
Mugove Maruzane
,
Yuichi Oshima
,
Olha Makydonska
,
Paul R Edwards
,
Robert W Martin
, and
Fabien C-P Massabuau
Journal:
Journal of Physics D: Applied Physics
Date Uploaded:
12/11/2024
Plasma-free anisotropic selective-area etching of β-Ga <sub>2</sub> O <sub>3</sub> using forming gas under atmospheric pressure
Description/Abstract:
We demonstrate a facile and safe anisotropic gas etching technique for β-Ga2O3 under atmospheric pressure using forming gas, a H2/N2 gas ...
Keyword:
Ga2O3
,
anisotropic etching
,
forming gas
, and
plasma-free process
Resource Type:
Article
Author:
Takayoshi Oshima
,
Rie Togashi
, and
Yuichi Oshima
Journal:
Science and Technology of Advanced Materials
Date Uploaded:
31/07/2024
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
Description/Abstract:
We demonstrated the effectiveness of plasma-free HCl gas etching on a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded ...
Keyword:
Ga2O3
and
HCl gas etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
14/06/2024
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Description/Abstract:
In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...
Keyword:
Ga2O3
,
HCl
, and
etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
28/05/2024
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
Description/Abstract:
Snドープ β-Ga2O3(001)のドーパントの原子位置を光電子ホログラフィ法により明らかにした。
Keyword:
Ga2O3
,
b-Ga2O3
, and
dopant
Resource Type:
Article
Author:
Yuhua Tsai
,
Masaaki Kobata
,
Tatsuo Fukuda
,
Hajime Tanida
,
Toru Kobayashi
, and
Yoshiyuki Yamashita
Journal:
Applied Physics Letters
Date Uploaded:
19/03/2024
Original dataset for ID 208 Ga2O3 in Thermophysical Property Database
Description/Abstract:
This is the original dataset for ID 208 Ga2O3 in Thermophysical Property Database (https://thermophys.nims.go.jp/thermophysicalproperty/e...
Keyword:
Ceramic
,
Density
,
Electrostatic Levitation
,
Ga2O3
,
ISS-ELF
, and
collection - Thermophys Datasets
Resource Type:
Dataset
Data origin:
experiments
Date Uploaded:
01/02/2024
Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3
Description/Abstract:
αおよびε酸化ガリウムのHVPE成長について解説する。
Keyword:
Ga2O3
and
HVPE
Resource Type:
Book
Author:
大島祐一
Journal:
Gallium Oxide: Crystal Growth, Materials Properties, and Devices (Springer)
Date Uploaded:
30/01/2024
Materials issues and devices of α- and β-Ga2O3
Description/Abstract:
パワーデバイスに向けたα- および β- Ga2O3の材料およびデバイス開発の最新状況を概観する。
Keyword:
Ga2O3
,
epitaxy
, and
power device
Resource Type:
Article
Author:
Elaheh Ahmadi
and
Yuichi Oshima
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
« Previous
Next »
1
2
Toggle facets
Limit your search
Type of work
Publication
13
Dataset
4
Collection
MDR phonon calculation database
2
MDR XAFS DB
1
Thermophysical Property Original Datasets
1
Keyword
Ga2O3
[remove]
17
Phonon
2
Superlattice
2
Aichi SR
1
BL5S1
1
more
Keywords
»
Language
English
13
Publisher
IOP Publishing
7
AIP Publishing
3
NIMS
2
Aichi Synchrotron Radiation Center
1
Elsevier BV
1
more
Publishers
»
Resource type
Article
12
Dataset
4
Book
1
Visibility
open
17
Rights Statement Sim
Creative Commons BY Attribution 4.0 International
6
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
6
In Copyright
4
Creative Commons BY-NC-SA Attribution-NonCommercial-ShareAlike 4.0 International
1
Data origin
experiments
2
simulation
2
Author
Takayoshi Oshima
8
Yuichi Oshima
6
Atsushi Togo
2
Masaki Takeguchi
2
Masataka Imura
2
more
Authors
»
Editor
Masashi Ishii
1
Instrument manufacturer
Aichi SR
1
Japan Aerospace Exploration Agency
1
Structural feature category
http://matvoc.nims.go.jp/entity/Q202
1
http://matvoc.nims.go.jp/entity/Q686
1
Funder
MEXT
2
Engineering and Physical Sciences Research Council
1
Japan Atomic Energy Agency
1
Ministry of Education, Culture, Sports, Science and Technology
1
TEPCO Memorial Foundation
1
more
Funders
»
Software
VASP
2
phonopy
2
spglib
2
Journal
APPLIED PHYSICS EXPRESS
2
Applied Physics Express
2
JAPANESE JOURNAL OF APPLIED PHYSICS
2
APPLIED PHYSICS LETTERS
1
Applied Physics Letters
1
more
Journals
»
