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Ga2O3
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Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
Description/Abstract:
Snドープ β-Ga2O3(001)のドーパントの原子位置を光電子ホログラフィ法により明らかにした。
Keyword:
Ga2O3
,
b-Ga2O3
, and
dopant
Resource Type:
Article
Author:
Yuhua Tsai
,
Masaaki Kobata
,
Tatsuo Fukuda
,
Hajime Tanida
,
Toru Kobayashi
, and
Yoshiyuki Yamashita
Journal:
Applied Physics Letters
Date Uploaded:
19/03/2024
Original dataset for ID 208 Ga2O3 in Thermophysical Property Database
Description/Abstract:
This is the original dataset for ID 208 Ga2O3 in Thermophysical Property Database (https://thermophys.nims.go.jp/thermophysicalproperty/e...
Keyword:
Ceramic
,
Density
,
Electrostatic Levitation
,
Ga2O3
,
ISS-ELF
, and
collection - Thermophys Datasets
Resource Type:
Dataset
Data origin:
experiments
Date Uploaded:
01/02/2024
Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3
Description/Abstract:
αおよびε酸化ガリウムのHVPE成長について解説する。
Keyword:
Ga2O3
and
HVPE
Resource Type:
Book
Author:
大島祐一
Journal:
Gallium Oxide: Crystal Growth, Materials Properties, and Devices (Springer)
Date Uploaded:
30/01/2024
Materials issues and devices of α- and β-Ga2O3
Description/Abstract:
パワーデバイスに向けたα- および β- Ga2O3の材料およびデバイス開発の最新状況を概観する。
Keyword:
Ga2O3
,
epitaxy
, and
power device
Resource Type:
Article
Author:
Elaheh Ahmadi
and
Yuichi Oshima
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
Description/Abstract:
β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics a...
Keyword:
Ga2O3
and
lithography
Resource Type:
Article
Author:
Takayoshi Oshima
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
17/01/2024
Date Modified:
24/01/2024
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
Description/Abstract:
We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrate...
Keyword:
Ga2O3
and
selective area growth
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
28/11/2023
Date Modified:
28/11/2023
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
Description/Abstract:
Ten-period binary α-Al2O3/Ga2O3 superlattices were fabricated on r-plane sapphire substrates by molecular beam epitaxy. By systematic var...
Keyword:
Ga2O3
and
Superlattice
Resource Type:
Article
Author:
Takayoshi Oshima
,
Yuji Kato
,
Masataka Imura
,
Yoshiko Nakayama
, and
Masaki Takeguchi
Journal:
APPLIED PHYSICS EXPRESS
Date Uploaded:
28/11/2023
Date Modified:
28/11/2023
Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
Description/Abstract:
We succeeded in fabricating 10-period coherent γ Al2O3/Ga2O3 superlattices (SLs) on MgAl2O4 substrates by molecular beam epitaxy. By vary...
Keyword:
Ga2O3
and
Superlattice
Resource Type:
Article
Author:
Yuji Kato
,
Masataka Imura
,
Yoshiko Nakayama
,
Masaki Takeguchi
, and
Takayoshi Oshima
Journal:
APPLIED PHYSICS EXPRESS
Date Uploaded:
28/11/2023
Date Modified:
28/11/2023
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Description/Abstract:
In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...
Keyword:
Ga2O3
,
HCl
, and
etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
21/11/2023
Date Modified:
27/11/2023
Ab-initio phonon calculation for Ga2O3 / C2/m (12) / materials id 886
Description/Abstract:
Ab-initio phonon calculation for Ga2O3 / C2/m (12) Phonon band structure, phonon DOS, thermal properties at constant volume, and phonon r...
Keyword:
C2/m (12)
,
Ga2O3
, and
Phonon
Resource Type:
Dataset
Data origin:
simulation
Author:
Atsushi Togo
Date Uploaded:
27/05/2023
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