Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3

DOI

• https://doi.org/10.48505/nims.4363

First published at

• https://link.springer.com/chapter/10.1007/978-3-030-37153-1_11

Creator

• Name

  大島祐一

  ORCID

  https://orcid.org/0000-0001-8293-4891

  Organization

  National Institute for Materials Science

  Sub organization

  Research Center for Functional Materials/Optical Materials Field/Optical Single Crystals Group

  Role

  author

Keyword

• Ga2O3
• HVPE

Resource type

• Book

Publisher

• Springer

Date published

• 24/04/2020

Rights statement

• In Copyright

Journal

• Title

  Gallium Oxide: Crystal Growth, Materials Properties, and Devices (Springer)

Manuscript type

• Accepted manuscript

Language

• English

Items

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	Figures181210.pdf		1.32 MB	MDR Open	Press to Select an action Download
	GaO-Oshima181210.pdf		620 KB	MDR Open	Press to Select an action Download