Publication
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
MDR Open Deposited
Ten-period binary α-Al2O3/Ga2O3 superlattices were fabricated on r-plane sapphire substrates by molecular beam epitaxy. By systematic variation of α-Ga2O3 thickness and evaluation through X-ray reflectivity and diffraction measurements and scanning transmission electron microscopy, we verified that the superlattice with α-Ga2O3 thickness up to >1nm had coherent interfaces without misfit dislocation in spite of the large lattice mismatches. This successful fabrication of coherent α-Al2O3/Ga2O3 superlattices will encourage further development of α-(AlxGa1%x)2O3-based heterostructures including superlattices.
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- 27/04/2018
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- Accepted manuscript
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- 28/11/2023
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