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Tanuma, Shigeo
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表面電子分光法における信号の減衰はいかに記述されるか? II. 誘電関数とIMFP
Description/Abstract:
表面電子分光法では電子および光と物質の相互作用は非常に重要であり,信号の減衰を理解するのに不可欠である。そこで,これらの相互作用を統一的に考えるために誘電関数,エネルギー損失関数を導入し,光・電子と物質の相互作用について解説する。また,発生した電子を検出する表面電子分光法で...
Keyword:
electron inelastic mean free paths
,
surface electron spectroscopy
,
dielectric function
, and
energy loss function
Resource Type:
Article
Author:
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
27/06/2022
Date Modified:
01/07/2022
Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy. Effects of Zalar Rotation and Liquid Nitrogen Cold Stage
Description/Abstract:
We have investigated the Auger depth profiling analysis of InP/GaInAsP multilayer specimens. It is difficult to obtain the Auger depth pr...
Keyword:
Auger Depth Profiling Analysis
,
InP/GaInAsP Multilayers
,
Zalar Rotation Method
, and
Sample Cooling Method
Material/Specimen:
InP/GaInAsP Multilayers
Resource Type:
Article
Author:
Ogiwara, Toshiya
,
Tanuma, Shigeo
,
Nagasawa, Yuji
, and
Ikeo, Nobuyuki
Journal:
Journal of The Surface Science Society of Japan
Date Uploaded:
09/09/2021
Date Modified:
09/09/2021
Ultra High Depth Resolution Auger Depth Profiling by Both Electron and Ion Beams at the Glancing Incidence using an Inclined Specimen Holder
Description/Abstract:
We developed a 85°-high-angle inclined specimen holder which enabled the specimen surface to be irradiated by both electron and ion beams...
Keyword:
Auger Depth Profiling Analysis
,
Inclined Holder
,
GaAs/AlAs Superlattice
, and
Si/Ge multiple delta-doped layers
Material/Specimen:
GaAs/AlAs Superlattice and Si/Ge multiple delta-doped layers
Resource Type:
Article
Author:
Ogiwara, Toshiya
,
Nagatomi, Takaharu
,
Kim, Kyung Joong
, and
Tanuma, Shigeo
Journal:
Journal of The Surface Science Society of Japan
Date Uploaded:
08/09/2021
Date Modified:
08/09/2021
InP/GaInAs多層膜のAES深さ方向分析のラウンドロビン試験報告(I)
Description/Abstract:
AES深さ方向分析の標準化を進めるために,InP/GaInAs多層膜を用いたデプスプロファイル測定のラウンドロビン試験を行った.参加した23機関の装置は3社に分類され,その仕様が異なるため,測定条件は電子線およびイオンの加速電圧を3kVに固定して,その他の条件は各機関に一任...
Keyword:
Auger Depth Profiling Analysis
,
InP/GaInAs Specimen
, and
Round Robin Test
Material/Specimen:
InP/GaInAs Multilayer
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
29/07/2021
Date Modified:
02/08/2021
試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析
Description/Abstract:
試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析について検討を行った.分析時の試料保持温度を常温および-190℃として,それぞれの温度について電子線電流密度を3段階に変えてデプスプロファイルを取得した.イオン加速電圧は3kVである.また,測定したオー...
Keyword:
Auger Depth Profiling Analysis
,
Sample Cooling Method
, and
SiO2/Si
Material/Specimen:
SiO2:103nm/Si-Substrate
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
26/07/2021
Date Modified:
26/07/2021
High-Sensitivity and High-Depth Resolution Auger Depth Profiling Using an Inclined Holder based on Geometric Characteristics of Auger Electron Spectroscopy Apparatus Equipped with Concentric Hemispherical Analyzer
Description/Abstract:
半球型電子分光器を搭載したオージェ電子分光装置では,傾斜ホルダーを用いると装置のジオ メトリー特性との関係からイオン及び一次電子の入射角の自由度が大きくなる.特に試料回転の 回転軸が一次電子の入射方向と一致する場合は,傾斜ホルダーの回転角によってイオン入射角を 設定でき,電...
Keyword:
Auger Depth Profiling Analysis
,
Inclined Holder
,
GaAs/AlAs Superlattice
, and
Si/Ge multiple delta-doped layers
Material/Specimen:
GaAs/AlAs Superlattice
and
Si/Ge multiple delta-doped layers
Resource Type:
Article
Author:
Ogiwara, Toshiya
,
Nagatomi, Takaharu
,
Kim, Kyung Joong
, and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
14/06/2021
Date Modified:
18/06/2021
Arイオンスパッタリングされた各種化合物半導体表面のSEM観察
Description/Abstract:
各種化合物半導体の表面をArイオンでスパッタリングして,その表面のSEM観察を行なった.そして,イオンスパッタリング時の試料温度および試料回転の有無と表面形状の関係を系統的に調べた.その結果,表面あれはスパッタリングされた表面全体に生成する場合とコーン状の突起物がランダムに...
Keyword:
compound semiconductor
,
surface observation using a scanning electron microscope
, and
argon ion sputtering
Material/Specimen:
InP
,
InSb
,
InAs
,
GaAs
,
GaSb
, and
GaP
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
28/05/2021
Date Modified:
04/06/2021
InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性
Description/Abstract:
InP/GaInAsP多層膜を用いて,AES深さ方向分析における深さ分解能の試料温度依存性について検討を行なった.試料温度は,0〜50℃(10℃間隔)およびー120,−20℃の8条件としてデプスプロファイルを取得した.スパッタリング条件は,イオン種:Ar,イオン加速電圧:1...
Keyword:
InP/GaInAsP多層膜
,
Auger Depth Profiling Analysis
,
Depth Resolution
, and
Sample Temperature
Material/Specimen:
InP/GaInAsP Multilayer Film
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
28/05/2021
Date Modified:
28/05/2021
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Surface Analysis Society of Japan
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GaAs/AlAs Superlattice
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GaAs/AlAs Superlattice and Si/Ge multiple delta-doped layers
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Tanuma, Shigeo
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Ogiwara, Toshiya
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Kim, Kyung Joong
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