Ultra High Depth Resolution Auger Depth Profiling by Both Electron and Ion Beams at the Glancing Incidence using an Inclined Specimen Holder

MDR Open Deposited

We developed a 85°-high-angle inclined specimen holder which enabled the specimen surface to be irradiated by both electron and ion beams at the glancing incidence. We have investigated the high depth resolution Auger depth profiling analysis with the inclined specimen holder. In consequence, the resulting depth resolution for the GaAs/AlAs superlattice was found to be independent of the sputtered depth. The highest depth resolution of 1.7 nm was achieved with the Al-LVV Auger peak. The Auger depth profiles of the Si/Ge multiple delta-doped layers revealed that the Ge monolayer can be measured in-depth profiled with high sensitivity using this inclined specimen holder.

First published at
Resource type
  • GaAs/AlAs Superlattice and Si/Ge multiple delta-doped layers
Date published
  • 10/10/2011
Rights statement
Licensed Date
  • 03/08/2011
Manuscript type
  • Version of record (Published version)
Last modified
  • 08/09/2021