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Yuichi Oshima
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Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10...
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3...
Materials issues and devices of α- and β-Ga2O3
Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-...
Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through ...
Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral o...
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HVPE
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α-Ga2O3
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ELO
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Ga2O3
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dislocation
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English
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IOP Publishing
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Creative Commons BY Attribution 4.0 International
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Author
Yuichi Oshima
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Takashi Shinohe
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Takayoshi Oshima
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Elaheh Ahmadi
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Katsuaki Kawara
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JOURNAL OF APPLIED PHYSICS
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APPLIED PHYSICS EXPRESS
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APPLIED PHYSICS LETTERS
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Applied Physics Express
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JAPANESE JOURNAL OF APPLIED PHYSICS
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