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Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth
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We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prepared on an ELO α-Ga2O3, and α-Ga2O3 islands were regrown on the mask windows. The α-Ga2O3 islands of second ELO grew selectively and coalesced step-by-step due to the nested-structure mask pattern. No dislocation was found by TEM not only above the masks but also above the windows of second ELO pattern, and the dislocation density was estimated to be less than 5 × 10^6 cm-2. We obtained continuous α-Ga2O3 films with a low density of dislocations in the entire surface.
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- 03/07/2020
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- © 2020 The Japan Society of Applied Physics
This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/ab9fc5.
- © 2020 The Japan Society of Applied Physics
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- 23/01/2024
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(5)二重ELO-paper_r03.3_最終版(YO-edit).pdf | 801 KB | MDR Open |
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