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Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction

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We demonstrate x-ray diffraction based composition estimation of b-(AlxGa1-x)2O3 coherently grown on (010) b-Ga2O3. The relation between the strain along the [010] direction and the Al composition of the b-(AlxGa1-x)2O3 layer was formulated by using stress-strain relationship in the monoclinic system. This formulation allows us to estimate the Al composition using out-of-plane lattice spacing determined by conventional x-ray omega-2theta measurements. This method was applied to MBE-grown coherent b-(AlxGa1-x)2O3/Ga2O3 heterostructures, and the Al composition in the b-(AlxGa1-x)2O3 are in close agreement with composition determined directly by atom probe tomography.

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  • 24/05/2016
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  • Accepted manuscript
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  • 24/01/2024
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    @2016 The Japan Society of Applied Physics
    This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.7567/APEX.9.061102.

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