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Auger Depth Profiling Analysis
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1.
Depth Profiling Analysis of InP/GaInAsP Multilayer Structure with Auger Electron Spectroscopy by Using Argon Ion Spot Beam
Description/Abstract:
It is very difficult to obtained the Auger depth profile of InP multilayer structures with argon ion sputtering because the very large su...
Keyword:
Auger Depth Profiling Analysis
,
Argon Ion Spot Beam
, and
InP/GaInAsP Multilayer Specimen
Material/Specimen:
InP/GaInAsP Multilayer
Resource Type:
Article
Author:
OGIWARA, Toshiya
,
HARADA, Tomoko
, and
TANUMA, Shigeo
Journal:
Journal of The Surface Science Society of Japan
Date Uploaded:
01/10/2021
Date Modified:
01/10/2021
2.
Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy. Effects of Zalar Rotation and Liquid Nitrogen Cold Stage
Description/Abstract:
We have investigated the Auger depth profiling analysis of InP/GaInAsP multilayer specimens. It is difficult to obtain the Auger depth pr...
Keyword:
Auger Depth Profiling Analysis
,
InP/GaInAsP Multilayers
,
Zalar Rotation Method
, and
Sample Cooling Method
Material/Specimen:
InP/GaInAsP Multilayers
Resource Type:
Article
Author:
Ogiwara, Toshiya
,
Tanuma, Shigeo
,
Nagasawa, Yuji
, and
Ikeo, Nobuyuki
Journal:
Journal of The Surface Science Society of Japan
Date Uploaded:
09/09/2021
Date Modified:
09/09/2021
3.
Ultra High Depth Resolution Auger Depth Profiling by Both Electron and Ion Beams at the Glancing Incidence using an Inclined Specimen Holder
Description/Abstract:
We developed a 85°-high-angle inclined specimen holder which enabled the specimen surface to be irradiated by both electron and ion beams...
Keyword:
Auger Depth Profiling Analysis
,
Inclined Holder
,
GaAs/AlAs Superlattice
, and
Si/Ge multiple delta-doped layers
Material/Specimen:
GaAs/AlAs Superlattice and Si/Ge multiple delta-doped layers
Resource Type:
Article
Author:
Ogiwara, Toshiya
,
Nagatomi, Takaharu
,
Kim, Kyung Joong
, and
Tanuma, Shigeo
Journal:
Journal of The Surface Science Society of Japan
Date Uploaded:
08/09/2021
Date Modified:
08/09/2021
4.
English Translation of J. Surf. Anal. 24, 192-205(2018), Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam
Description/Abstract:
We have investigated the Auger depth profiling analysis of HfO2 /Si by the glancing angle ion beam sputtering method at an incident angle...
Keyword:
Auger Depth Profiling Analysis
,
HfO2/Si
, and
Ultra Low Angle Incidence Ion Beam
Material/Specimen:
HfO2
Resource Type:
Article
Author:
Ogiwara, Toshiya
,
Nagata, Takahiro
, and
Yoshikawa, Hideki
Journal:
Journal of Surface Analysis
Date Uploaded:
19/08/2021
Date Modified:
20/08/2021
5.
InP/GaInAs多層膜のAES深さ方向分析のラウンドロビン試験報告(I)
Description/Abstract:
AES深さ方向分析の標準化を進めるために,InP/GaInAs多層膜を用いたデプスプロファイル測定のラウンドロビン試験を行った.参加した23機関の装置は3社に分類され,その仕様が異なるため,測定条件は電子線およびイオンの加速電圧を3kVに固定して,その他の条件は各機関に一任...
Keyword:
Auger Depth Profiling Analysis
,
InP/GaInAs Specimen
, and
Round Robin Test
Material/Specimen:
InP/GaInAs Multilayer
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
29/07/2021
Date Modified:
02/08/2021
6.
試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析
Description/Abstract:
試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析について検討を行った.分析時の試料保持温度を常温および-190℃として,それぞれの温度について電子線電流密度を3段階に変えてデプスプロファイルを取得した.イオン加速電圧は3kVである.また,測定したオー...
Keyword:
Auger Depth Profiling Analysis
,
Sample Cooling Method
, and
SiO2/Si
Material/Specimen:
SiO2:103nm/Si-Substrate
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
26/07/2021
Date Modified:
26/07/2021
7.
High-Sensitivity and High-Depth Resolution Auger Depth Profiling Using an Inclined Holder based on Geometric Characteristics of Auger Electron Spectroscopy Apparatus Equipped with Concentric Hemispherical Analyzer
Description/Abstract:
半球型電子分光器を搭載したオージェ電子分光装置では,傾斜ホルダーを用いると装置のジオ メトリー特性との関係からイオン及び一次電子の入射角の自由度が大きくなる.特に試料回転の 回転軸が一次電子の入射方向と一致する場合は,傾斜ホルダーの回転角によってイオン入射角を 設定でき,電...
Keyword:
Auger Depth Profiling Analysis
,
Inclined Holder
,
GaAs/AlAs Superlattice
, and
Si/Ge multiple delta-doped layers
Material/Specimen:
GaAs/AlAs Superlattice
and
Si/Ge multiple delta-doped layers
Resource Type:
Article
Author:
Ogiwara, Toshiya
,
Nagatomi, Takaharu
,
Kim, Kyung Joong
, and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
14/06/2021
Date Modified:
18/06/2021
8.
Auger Depth Profiling Analysis of FeNi/CoFeB/FeNi Specimen Using an Ultra Low Angle Incidence Ion Beam
Description/Abstract:
磁気ヘッド材料として用いられているFeNi:5 nm/CoFeB:3 nm/FeNi:10 nm多層薄膜の深さ方向組成分布を調べるために,極低角度入射イオンビームを用いたオージェ深さ方向分析によりイオン加速電圧0.5 kVおよび3.0 kVのスパッタ条件で分析を行った.その...
Keyword:
Auger Depth Profiling Analysis
,
Ultra Low Angle Incidence Ion Beam
, and
FeNi/CoFeB/FeNi Thin Film
Material/Specimen:
FeNi/CoFeB/FeNi Thin Film
Resource Type:
Article
Author:
Ogiwara, Toshiya
,
Yanagiuchi, Katsuaki
, and
Yoshikawa, Hideki
Journal:
Journal of Surface Analysis
Date Uploaded:
28/05/2021
Date Modified:
04/06/2021
9.
InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性
Description/Abstract:
InP/GaInAsP多層膜を用いて,AES深さ方向分析における深さ分解能の試料温度依存性について検討を行なった.試料温度は,0〜50℃(10℃間隔)およびー120,−20℃の8条件としてデプスプロファイルを取得した.スパッタリング条件は,イオン種:Ar,イオン加速電圧:1...
Keyword:
InP/GaInAsP多層膜
,
Auger Depth Profiling Analysis
,
Depth Resolution
, and
Sample Temperature
Material/Specimen:
InP/GaInAsP Multilayer Film
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
28/05/2021
Date Modified:
28/05/2021
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GaAs/AlAs Superlattice
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