14 件のレコードが見つかりました。
Epitaxial configuration of unidirectionally aligned MoS2 monolayer on sapphire
- ジャーナル論文
- 著者
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Akihiro Ohtake (author) (この著者で検索)
;
Jun Nara (author) (この著者で検索)
;
Yoshiki Sakuma (author) (この著者で検索)
- キーワード
- transition-metal dichalcogenide, low-energy electron diffraction, epitaxial growth
- 刊行年月日
- 2026-01-14
- 更新時刻
- 2026-01-14 13:07:15 +0900
Current-injection quantum-entangled-pair emitter using droplet epitaxial quantum dots on GaAs(111)A
- ジャーナル論文
- 著者
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Neul Ha (author) (この著者で検索)National Institute for Materials Science
;
Takaaki Mano (author) (この著者で検索)National Institute for Materials Science
;
Takashi Kuroda (author) (この著者で検索)National Institute for Materials Science
;
Yoshiki Sakuma (author) (この著者で検索)National Institute for Materials Science
;
Kazuaki Sakoda (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaAs, Quantum Dot, Droplet Epitaxy, Entanglement, (111)A, Fine Structure Splitting, Electroluminescence
- 刊行年月日
- 2019-08-19
- 更新時刻
- 2025-12-06 12:30:15 +0900
Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 μm
- ジャーナル論文
- 著者
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Neul Ha (author) (この著者で検索)National Institute for Materials Science
;
Takaaki Mano (author) (この著者で検索)National Institute for Materials Science
;
;Samuel Dubos (author) (この著者で検索)Takashi Kuroda (author) (この著者で検索)National Institute for Materials Science
;
Yoshiki Sakuma (author) (この著者で検索)National Institute for Materials Science
;
Kazuaki Sakoda (author) (この著者で検索)National Institute for Materials Science
- キーワード
- InAs, Quantum Dot, Droplet Epitaxy, Single photon, (111)A, Fine Structure Splitting, Telecommunication
- 刊行年月日
- 2020-02-01
- 更新時刻
- 2025-12-06 12:30:07 +0900
2D‐Material‐Fused High‐Emittance Plasmo–Photonic Metasurfaces
- ジャーナル論文
- 著者
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Masanobu Iwanaga (author) (この著者で検索)
;
Xu Yang (author) (この著者で検索)
https://orcid.org/0000-0001-8195-5850
(unauthenticated)
;
Vasilios Karanikolas (author) (この著者で検索)
https://orcid.org/0000-0002-4829-8921
(unauthenticated)
;
Takashi Kuroda (author) (この著者で検索)
;
Yoshiki Sakuma (author) (この著者で検索)
- キーワード
- 2D materials, transition metal dichalcogenide, tungsten disulfide, plasmo-photonic metasurface, luminescence enhancement, Raman-scattering enhancement
- 刊行年月日
- 2024-04-03
- 更新時刻
- 2024-06-19 12:30:14 +0900
Prominently enhanced luminescence from a continuous monolayer of transition metal dichalcogenide on all-dielectric metasurfaces
- ジャーナル論文
- 著者
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Masanobu Iwanaga (author) (この著者で検索)National Institute for Materials Science
;
Xu Yang (author) (この著者で検索)
https://orcid.org/0000-0001-8195-5850
(unauthenticated)
National Institute for Materials Science
;
Vasilios Karanikolas (author) (この著者で検索)
https://orcid.org/0000-0002-4829-8921
(unauthenticated)
National Institute for Materials Science
;
Takashi Kuroda (author) (この著者で検索)National Institute for Materials Science
;
Yoshiki Sakuma (author) (この著者で検索)National Institute for Materials Science
- キーワード
- 2D materials, transition metal dichalcogenide, tungsten disulfide, all-dielectric metasurface, enhanced photoluminescence, resonance enhancement, coherent photon emitter
- 刊行年月日
- 2024-01-17
- 更新時刻
- 2024-04-03 12:30:19 +0900
Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ Er2O3 Dielectrics on Two-Dimensional MoS2 Field-Effect Transistors
- ジャーナル論文
- 著者
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;Shuhong Li (author) (この著者で検索);Ryotaro Otake (author) (この著者で検索);Tomonori Nishimura (author) (この著者で検索)Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Yoshiki Sakuma (author) (この著者で検索)National Institute for Materials Science
;
Kosuke Nagashio (author) (この著者で検索)
- キーワード
- High-κ dielectric, MoS2, 2D semiconductor
- 刊行年月日
- 2025-05-05
- 更新時刻
- 2026-07-29 11:45:27 +0900
Unveiling Twist Domains in Monolayer MoS2 through 4D‐STEM and Unsupervised Machine Learning
- ジャーナル論文
- 著者
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Koji Kimoto (author) (この著者で検索)
;
Ovidiu Cretu (author) (この著者で検索)
;
Koji Harano (author) (この著者で検索)
;
Fumihiko Uesugi (author) (この著者で検索)
;
Jun Kikkawa (author) (この著者で検索)
;
Kohei Aso (author) (この著者で検索)
https://orcid.org/0000-0001-6935-7655
(unauthenticated)
;
Yoshifumi Oshima (author) (この著者で検索)
https://orcid.org/0000-0003-1898-0142
(unauthenticated)
;
Takashi Matsumoto (author) (この著者で検索)
https://orcid.org/0009-0007-7418-6724
(unauthenticated)
;
Yoshiki Sakuma (author) (この著者で検索)
- キーワード
- 4D-STEM, dichalcogenide, metal–organic chemical vapor deposition, MoS2,, scanning transmission electron microscopy, unsupervised machine learning
- 刊行年月日
- 2025-08-06
- 更新時刻
- 2025-08-27 12:30:17 +0900
Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High‐Temperature‐Resistant Single‐Crystal Aluminum Nitride (0001)
- ジャーナル論文
- 著者
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Xu Yang (author) (この著者で検索)
https://orcid.org/0000-0001-8195-5850
(unauthenticated)
National Institute for Materials Science
;
;Markus Pristovsek (author) (この著者で検索);Shugo Nitta (author) (この著者で検索);Yoshio Honda (author) (この著者で検索)Akihiro Ohtake (author) (この著者で検索)National Institute for Materials Science
;
Yoshiki Sakuma (author) (この著者で検索)National Institute for Materials Science
;
Takanobu Hiroto (author) (この著者で検索)National Institute for Materials Science
;
;Takayuki Ishida (author) (この著者で検索);Michio Ikezawa (author) (この著者で検索);Qixin Guo (author) (この著者で検索)Hiroshi Amano (author) (この著者で検索)
- キーワード
- Epitaxial BN layers
- 刊行年月日
- 2025-09-29
- 更新時刻
- 2025-12-15 13:40:58 +0900
Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A
- ジャーナル論文
- 著者
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;Neul Ha (author) (この著者で検索);Xiangming Liu (author) (この著者で検索)Takaaki Mano (author) (この著者で検索)
;
Takashi Kuroda (author) (この著者で検索)
;
Kazutaka Mitsuishi (author) (この著者で検索)
;
;Andrea Castellano (author) (この著者で検索);Stefano Sanguinetti (author) (この著者で検索)Takeshi Noda (author) (この著者で検索)
;
Yoshiki Sakuma (author) (この著者で検索)
;
Kazuaki Sakoda (author) (この著者で検索)
- キーワード
- InAs, Quantum Dot, Droplet Epitaxy, Entanglement, (111)A, Fine Structure Splitting, Telecommunication
- 刊行年月日
- 2014-04-07
- 更新時刻
- 2025-12-06 12:30:12 +0900
MOCVD‐Grown MoS 2 Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering
- ジャーナル論文
- 著者
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;Shuhong Li (author) (この著者で検索);Juiteng Chang (author) (この著者で検索);Keisuke Atsumi (author) (この著者で検索);Kosei Matsumoto (author) (この著者で検索);Itsuki Tanaka (author) (この著者で検索);Tomonori Nishimura (author) (この著者で検索);Kaito Kanahashi (author) (この著者で検索)Takahiro Nagata (author) (この著者で検索)
;
;Jun Nara (author) (この著者で検索);Yoshiki Sakuma (author) (この著者で検索);Emi Kano (author) (この著者で検索);Nobuyuki Ikarashi (author) (この著者で検索)Kosuke Nagashio (author) (この著者で検索)
https://orcid.org/0000-0003-1181-8644
(unauthenticated)
- キーワード
- MOCVD-grownMoS2wafers, interfacialchargetransfer, transfer-freedevicefabrication, top-gatefield-effecttransistors, wafer-scale2Dsemiconductors
- 刊行年月日
- 2026-07-05
- 更新時刻
- 2026-07-29 09:15:47 +0900