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説明:

We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 μm telecom C-band. The luminescence decay is well described in terms
of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autocorrelation function shows clear anti-bunching photon statistics. The results suggest that our quantum dots are useful for constructing a practical source of single photons and
quantum entangled photon pairs.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: InAs, Quantum Dot, Droplet Epitaxy, Single photon, (111)A, Fine Structure Splitting, Telecommunication

刊行年月日: 2020-02-01

出版者: IOP Publishing

掲載誌:

• Applied Physics Express (ISSN: 18820786) vol. 13 issue. 2 025002

研究助成金:

• Japan Society for the Promotion of Science 16H02203
• 日本学術振興会 25390011 (液滴エピタキシー法による理想的な量子ドットの自己形成 基盤研究(C))

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.35848/1882-0786/ab6e0f

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更新時刻: 2025-12-06 12:30:07 +0900

MDRでの公開時刻: 2025-12-06 08:34:00 +0900