4 件のレコードが見つかりました。
Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ Er2O3 Dielectrics on Two-Dimensional MoS2 Field-Effect Transistors
- ジャーナル論文
- 著者
-
;Shuhong Li (author) (この著者で検索);Ryotaro Otake (author) (この著者で検索);Tomonori Nishimura (author) (この著者で検索)Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Yoshiki Sakuma (author) (この著者で検索)National Institute for Materials Science
;
Kosuke Nagashio (author) (この著者で検索) - キーワード
- High-κ dielectric, MoS2, 2D semiconductor
- 刊行年月日
- 2025-05-05
- 更新時刻
- 2026-07-29 11:45:27 +0900
MOCVD‐Grown MoS 2 Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering
- ジャーナル論文
- 著者
-
;Shuhong Li (author) (この著者で検索);Juiteng Chang (author) (この著者で検索);Keisuke Atsumi (author) (この著者で検索);Kosei Matsumoto (author) (この著者で検索);Itsuki Tanaka (author) (この著者で検索);Tomonori Nishimura (author) (この著者で検索);Kaito Kanahashi (author) (この著者で検索)Takahiro Nagata (author) (この著者で検索)
;
;Jun Nara (author) (この著者で検索);Yoshiki Sakuma (author) (この著者で検索);Emi Kano (author) (この著者で検索);Nobuyuki Ikarashi (author) (この著者で検索)Kosuke Nagashio (author) (この著者で検索)
https://orcid.org/0000-0003-1181-8644
(unauthenticated)
- キーワード
- MOCVD-grownMoS2wafers, interfacialchargetransfer, transfer-freedevicefabrication, top-gatefield-effecttransistors, wafer-scale2Dsemiconductors
- 刊行年月日
- 2026-07-05
- 更新時刻
- 2026-07-29 09:15:47 +0900
Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy
- ジャーナル論文
- 著者
-
;Emi Kano (author) (この著者で検索)Nagoya UniversityJun Nara (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Quantum Materials Simulation Group
;
;Koki Takenaka (author) (この著者で検索)Graduate School of Engineering, Nagoya University;Toshiki Yasuno (author) (この著者で検索)Graduate School of Engineering, Nagoya University;Keisuke Atsumi (author) (この著者で検索)Department of Materials Engineering, The University of Tokyo;Shuhong Shuhong Li (author) (この著者で検索)Department of Materials Engineering, The University of Tokyo;Tomonori Nishimura (author) (この著者で検索)Department of Materials Engineering, The University of Tokyo;Kaito Kanahashi (author) (この著者で検索)Department of Materials Engineering, The University of TokyoJun Uzuhashi (author) (この著者で検索)National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Electron Microscopy Unit
;
;Kosuke Nagashio (author) (この著者で検索)Department of Materials Engineering, The University of TokyoYoshiki Sakuma (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Epitaxial Structures Group
;
Nobuyuki Ikarashi (author) (この著者で検索)Nagoya University - キーワード
- MoS2, sapphire
- 刊行年月日
- 2025-12-22
- 更新時刻
- 2025-12-24 17:24:27 +0900
Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics
- ジャーナル論文
- 著者
-
Yoshiki Sakuma (author) (この著者で検索)National Institute for Materials Science
;
;Keisuke Atsumi (author) (この著者で検索)Takanobu Hiroto (author) (この著者で検索)National Institute for Materials Science
;
Jun Nara (author) (この著者で検索)National Institute for Materials Science
;
Akihiro Ohtake (author) (この著者で検索)National Institute for Materials Science
;
;Yuki Ono (author) (この著者で検索);Takashi Matsumoto (author) (この著者で検索);Yukihiro Muta (author) (この著者で検索);Kai Takeda (author) (この著者で検索);Emi Kano (author) (この著者で検索);Toshiki Yasuno (author) (この著者で検索);Xu Yang (author) (この著者で検索);Nobuyuki Ikarashi (author) (この著者で検索);Asato Suzuki (author) (この著者で検索);Michio Ikezawa (author) (この著者で検索);Shuhong Li (author) (この著者で検索);Tomonori Nishimura (author) (この著者で検索);Kaito Kanahashi (author) (この著者で検索)Kosuke Nagashio (author) (この著者で検索)
- キーワード
- MoS2, epitaxial growth, MOCVD
- 刊行年月日
- 2026-01-21
- 更新時刻
- 2026-01-29 16:30:04 +0900