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We deposited a highly oriented MoS2 film on a 2-inch amorphous-Al2O3 (0001) wafer by metal-organic chemical vapor deposition and determined the atomic configuration of the MoS2/amorphous-Al2O3 (0001) stacking structure by performing atomic resolution electron microscopy observations along two orthogonal zone axis directions, i.e., the 〈112 ̅0〉 and 〈11 ̅00〉 directions of amorphous-Al2O3. The results show that, first, the in-plane positions of Mo atoms coincide with those of the underlying Al and O atoms, and the [112 ̅0] direction of monolayer 2H-MoS2 matches that of the amorphous-Al2O3 substrate. Second, the amorphous-Al2O3 surface was a reconstructed Al-I structure. Moreover, we performed the first-principles calculations using the observed in-plane atomic positions of the MoS2/amorphous-Al2O3 structure as a starting configuration and found that the MoS2-Al2O3 distance is larger than the theoretical van der Waals distance. Because no ordered structures were observed between the MoS2 film and the Al2O3 substrate, the experimental and theoretical results strongly suggest that an amorphous interface layer exists between them. Such an amorphous interface layer is likely to weaken the MoS2-Al2O3 interaction that determines the stability of the MoS2/amorphous-Al2O3 (0001) structure. We thus argue that controlling the interface layer is critical in fabricating highly oriented MoS2 films and is vital for improving the performance of field-effect transistors with MoS2 channels.

権利情報:

• In Copyright
  

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Emi Kano, Jun Nara, Koki Takenaka, Toshiki Yasuno, Keisuke Atsumi, Shuhong Li, Tomonori Nishimura, Kaito Kanahashi, Jun Uzuhashi, Kosuke Nagashio, Yoshiki Sakuma, Nobuyuki Ikarashi; Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy. Appl. Phys. Lett. 22 December 2025; 127 (25): 252102. and may be found at https://doi.org/10.1063/5.0295643

キーワード: MoS2, sapphire

刊行年月日: 2025-12-22

出版者: American Institute of Physics

掲載誌:

• APPLIED PHYSICS LETTERS (ISSN: 00036951) vol. 127 issue. 25 252102

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6066

公開URL: https://doi.org/10.1063/5.0295643

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更新時刻: 2025-12-24 17:24:27 +0900

MDRでの公開時刻: 2025-12-25 08:19:48 +0900