キーワード: Ga2O3
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27 件のレコードが見つかりました。 1件目から10件目まで表示します。

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042110_1_5.0186319.pdf
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials
ORCID SAMURAI ;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials
ORCID SAMURAI
キーワード
Ga2O3, (-102), selective area growth, selective area etching
刊行年月日
2024-01-22
更新時刻
2025-01-25 12:30:12 +0900
article.pdf
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles
ジャーナル論文
著者
ORCID SAMURAI
キーワード
Ga2O3, TMAH
刊行年月日
2026-02-01
更新時刻
2026-02-25 12:30:03 +0900
Oshima - 2026 - Step-and-terrace surface formation on (−112) β-Ga 2 O 3 via thermal annealing-annotated.pdf
Step-and-terrace surface formation on (−112) β-Ga 2 O 3 via thermal annealing
ジャーナル論文
著者
ORCID SAMURAI
キーワード
Ga2O3
刊行年月日
2026-09-15
更新時刻
2026-09-14 09:13:42 +0900
Epitaxial lateral overgrowth of m-plane -Ga2O3 by halide vapor phase epitaxy-1.pdf
Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
ジャーナル論文
著者
ORCID SAMURAI ;
Takashi Shinohe (author) (この著者で検索)
ORCID
キーワード
Ga2O3, dislocation, ELO, HVPE
刊行年月日
2025-12-31
更新時刻
2025-04-23 12:30:12 +0900
Rapid homoepitaxial growth of 011 -Ga2O3 by HCl-based halide vapor phase epitaxy.pdf
Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI
キーワード
Ga2O3, HVPE
刊行年月日
2025-12-31
更新時刻
2025-11-28 08:30:04 +0900
paper.pdf
Formation of near-vertical trenches and fins with flat {−201} sidewalls on (512) β-Ga 2 O 3 via TMAH wet etching
ジャーナル論文
著者
ORCID SAMURAI
キーワード
Ga2O3
刊行年月日
2026-12-31
更新時刻
2026-09-24 09:54:18 +0900
manuscript2022-11.pdf
High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
ジャーナル論文
著者
Qihao Zhang (author) (この著者で検索)
;
Jiangwei Liu (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Chunming Tu (author) (この著者で検索)
;
Dongyuan Zhai (author) (この著者で検索)
;
Min He (author) (この著者で検索)
;
Jiwu Lu (author) (この著者で検索)
キーワード
Ga2O3, Transistor
刊行年月日
2023-01-03
更新時刻
2025-01-04 16:30:50 +0900
J_Appl_Phys_139_075302_(2026).pdf
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI ;
Shiyu Xiao (author) (この著者で検索)
ORCID ;
Kazuto Murakami (author) (この著者で検索)
;
Katsuhiro Imai (author) (この著者で検索)
;
Takahiro Tomita (author) (この著者で検索)
キーワード
Ga2O3, HVPE, Cr2O3
刊行年月日
2026-02-21
更新時刻
2026-02-18 16:30:15 +0900
TiPtAu_NIMS_Oshima.pdf
Ti/Pt/Au ohmic contacts to β-Ga2O3
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI
キーワード
Ga2O3, ohmic contact, Ti/Pt/Au
刊行年月日
2026-12-01
更新時刻
2026-10-24 08:30:10 +0900
Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
ジャーナル論文
著者
Toshihide Nabatame (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Hiromi Miura (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Manami Miyamoto (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Takashi Onaya (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
ORCID ;
Yasuo Koide (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
ORCID SAMURAI
キーワード
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
刊行年月日
2026-06-01
更新時刻
2026-08-18 11:30:17 +0900
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