Ion Migration in Monolayer Memristors
- ジャーナル論文
- 著者
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;Sotirios Papadopoulos (author) (この著者で検索);Tarun Agarwal (author) (この著者で検索);Achint Jain (author) (この著者で検索)Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
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Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
;Mathieu Luisier (author) (この著者で検索);Alexandros Emboras (author) (この著者で検索)Lukas Novotny (author) (この著者で検索) - キーワード
- Memristors, MoS2, defect densities
- 刊行年月日
- 2022-07-08
- 更新時刻
- 2025-03-01 12:30:23 +0900
First-principles lattice thermal conductivity calculation for MoS2 / R3m (160) / materials id 1434
- データセット
- コレクション
- MDR lattice thermal conductivity calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
- キーワード
- Lattice thermal conductivity, MoS2
- 刊行年月日
- 更新時刻
- 2026-01-24 14:57:47 +0900
Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics
- ジャーナル論文
- 著者
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Yoshiki Sakuma (author) (この著者で検索)National Institute for Materials Science
;
;Keisuke Atsumi (author) (この著者で検索)Takanobu Hiroto (author) (この著者で検索)National Institute for Materials Science
;
Jun Nara (author) (この著者で検索)National Institute for Materials Science
;
Akihiro Ohtake (author) (この著者で検索)National Institute for Materials Science
;
;Yuki Ono (author) (この著者で検索);Takashi Matsumoto (author) (この著者で検索);Yukihiro Muta (author) (この著者で検索);Kai Takeda (author) (この著者で検索);Emi Kano (author) (この著者で検索);Toshiki Yasuno (author) (この著者で検索);Xu Yang (author) (この著者で検索);Nobuyuki Ikarashi (author) (この著者で検索);Asato Suzuki (author) (この著者で検索);Michio Ikezawa (author) (この著者で検索);Shuhong Li (author) (この著者で検索);Tomonori Nishimura (author) (この著者で検索);Kaito Kanahashi (author) (この著者で検索)Kosuke Nagashio (author) (この著者で検索)
- キーワード
- MoS2, epitaxial growth, MOCVD
- 刊行年月日
- 2026-01-21
- 更新時刻
- 2026-01-29 16:30:04 +0900
Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy
- ジャーナル論文
- 著者
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;Emi Kano (author) (この著者で検索)Nagoya UniversityJun Nara (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Quantum Materials Simulation Group
;
;Koki Takenaka (author) (この著者で検索)Graduate School of Engineering, Nagoya University;Toshiki Yasuno (author) (この著者で検索)Graduate School of Engineering, Nagoya University;Keisuke Atsumi (author) (この著者で検索)Department of Materials Engineering, The University of Tokyo;Shuhong Shuhong Li (author) (この著者で検索)Department of Materials Engineering, The University of Tokyo;Tomonori Nishimura (author) (この著者で検索)Department of Materials Engineering, The University of Tokyo;Kaito Kanahashi (author) (この著者で検索)Department of Materials Engineering, The University of TokyoJun Uzuhashi (author) (この著者で検索)National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Electron Microscopy Unit
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;Kosuke Nagashio (author) (この著者で検索)Department of Materials Engineering, The University of TokyoYoshiki Sakuma (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Epitaxial Structures Group
;
Nobuyuki Ikarashi (author) (この著者で検索)Nagoya University
- キーワード
- MoS2, sapphire
- 刊行年月日
- 2025-12-22
- 更新時刻
- 2025-12-24 17:24:27 +0900
Steep-slope Schottky diode with cold metal source
- ジャーナル論文
- 著者
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;Wongil Shin (author) (この著者で検索);Gyuho Myeong (author) (この著者で検索);Kyunghwan Sung (author) (この著者で検索);Seungho Kim (author) (この著者で検索);Hongsik Lim (author) (この著者で検索);Boram Kim (author) (この著者で検索);Taehyeok Jin (author) (この著者で検索);Jihoon Park (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
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Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
;Fei Liu (author) (この著者で検索)Sungjae Cho (author) (この著者で検索)
- キーワード
- Low-power transistors, Schottky diode, MoS2
- 刊行年月日
- 2022-06-13
- 更新時刻
- 2025-02-26 08:30:57 +0900
Optimizing thermal energy harvesting in few-layer MoS2 with measurements of electron's effective mass in two-dimensional semiconductors
- ジャーナル論文
- 著者
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Kuan-Cheng Lu (author) (この著者で検索)
https://orcid.org/0009-0003-5351-9949
(unauthenticated)
;
Chetan Awasthi (author) (この著者で検索)
https://orcid.org/0000-0002-6027-5095
(unauthenticated)
;
;Ta-Wei Chiu (author) (この著者で検索)S. S. Islam (author) (この著者で検索)
https://orcid.org/0000-0001-7696-5499
(unauthenticated)
;
Kimitoshi Kono (author) (この著者で検索)
https://orcid.org/0000-0002-4446-4419
(unauthenticated)
;
Kazuhito Tsukagoshi (author) (この著者で検索)
;
Wen-Bin Jian (author) (この著者で検索)
https://orcid.org/0000-0002-1898-9641
(unauthenticated)
- キーワード
- Two-Dimensional Semiconductors, Seebeck Coefficient, MoS2, Mott’s Hopping Transport
- 刊行年月日
- 2026-03-01
- 更新時刻
- 2026-01-14 10:42:17 +0900
Evidence of the Coulomb gap in the density of states of
- ジャーナル論文
- 著者
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;Michele Masseroni (author) (この著者で検索);Tingyu Qu (author) (この著者で検索)Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
;Thomas Ihn (author) (この著者で検索)Klaus Ensslin (author) (この著者で検索)
- キーワード
- MoS2, dual-gated exfoliated bilayer, electron localization
- 刊行年月日
- 2023-02-14
- 更新時刻
- 2025-02-28 12:30:25 +0900
Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering
- ジャーナル論文
- 著者
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Yoshitaka Shingaya (author) (この著者で検索)National Institute for Materials Science
;
Daiki Nishioka (author) (この著者で検索)National Institute for Materials Science
;
Kazuya Terabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Tsuchiya (author) (この著者で検索)National Institute for Materials Science
- キーワード
- physical reservoir computing, resonant Raman scattering, MoS2, electric double layer transistor, Raman-ion-gating reservoir
- 刊行年月日
- 2025-10-23
- 更新時刻
- 2025-11-17 12:30:04 +0900
Hot Electron Engineering in Layered Heterojunctions for Efficient Infrared Detection
- ジャーナル論文
- 著者
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;Pushkar Dasika (author) (この著者で検索);Patrick Hays (author) (この著者で検索);Suchithra Puliyassery (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
;
;Seth Ariel Tongay (author) (この著者で検索)Kausik Majumdar (author) (この著者で検索)
- キーワード
- Hot electron infrared detector, MoS2, Schottky diode
- 刊行年月日
- 2025-04-15
- 更新時刻
- 2026-07-06 09:28:20 +0900
Patternable laser-oxidized Ta2O5 dielectric and TaS2 contact for optimizing subthreshold swing of MoS2 field-effect transistors
- ジャーナル論文
- 著者
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;Kuan-Cheng Lu (author) (この著者で検索);Pen-Yuan Shih (author) (この著者で検索);Pin-Hsien Lin (author) (この著者で検索);Shih-Hao Wu (author) (この著者で検索);Kimitoshi Kono (author) (この著者で検索)Wen-Bin Jian (author) (この著者で検索)
https://orcid.org/0000-0002-1898-9641
(unauthenticated)
;
;Yu-Han Lin (author) (この著者で検索);Yo-Yao Ho (author) (この著者で検索)Ching-Hwa Ho (author) (この著者で検索)
https://orcid.org/0000-0002-7195-208X
(unauthenticated)
;
;Shin-Yuan Wang (author) (この著者で検索);Chao-Hsin Chien (author) (この著者で検索)Ching-Yu Chiang (author) (この著者で検索)
https://orcid.org/0000-0002-3640-0474
(unauthenticated)
;
;Shu-Jui Chang (author) (この著者で検索);Yu-Che Huang (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)
;
Takashi Taniguchi (author) (この著者で検索)
;
Kazuhito Tsukagoshi (author) (この著者で検索)
;
Chenming Hu (author) (この著者で検索)
https://orcid.org/0000-0003-0836-6296
(unauthenticated)
- キーワード
- Ta2O5, TaS2, subthreshold swing, MoS2, field-effect transistors
- 刊行年月日
- 2026-02-24
- 更新時刻
- 2026-03-04 16:30:07 +0900