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説明:

Today’s circuit technology requires low-power transistors and diodes to extend Moore’s law. While research efforts have been focused on reducing power consumption of trasistors, low-power diodes have not been widely studied. Here, we report a low-power, thus steep-slope Schottky diode with “cold metal” source. The Schottky barrier between metal electrode and bulk MoS2 enabled the diode behavior, and the steep-slope diode IV curve originates from the change in the density of states (DOSs) of a graphite (cold metal) source with a bias voltage. The MoS2 Schottky diode with a cold-metal exhibits an ideality factor (η) < 1 for more than three decades of drain current with a sizeable rectifying ratio (105). The realization of a steep-slope Schottky diode paves the way to the improvement of low-power circuit technology.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Low-power transistors, Schottky diode, MoS2

刊行年月日: 2022-06-13

出版者: AIP Publishing

掲載誌:

• Applied Physics Letters (ISSN: 00036951) vol. 120 issue. 24 243506

研究助成金:

• National Research Foundation of Korea 2019M3F3A1A03079760
• National Research Foundation of Korea 2020M3F3A2A01081899
• National Research Foundation of Korea 2020R1A2C2100258
• Data Center of Management Science, National Natural Science Foundation of China - Peking University 61974003

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0097408

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更新時刻: 2025-02-26 08:30:57 +0900

MDRでの公開時刻: 2025-02-26 08:30:57 +0900