Evidence of the Coulomb gap in the density of states of 
<math>
  <msub>
    <mi>MoS</mi>
    <mn>2</mn>
  </msub>
</math>

Michele Masseroni; Tingyu Qu; Takashi Taniguchi; Kenji Watanabe; Thomas Ihn; Klaus Ensslin

doi:10.1103/physrevresearch.5.013113

論文 Evidence of the Coulomb gap in the density of states of

{MoS}_{2}

Michele Masseroni ; Tingyu Qu ; Takashi Taniguchi (National Institute for Materials Science) ; Kenji Watanabe (National Institute for Materials Science) ; Thomas Ihn ; Klaus Ensslin

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引用

Michele Masseroni, Tingyu Qu, Takashi Taniguchi, Kenji Watanabe, Thomas Ihn, Klaus Ensslin. Evidence of the Coulomb gap in the density of states of

{MoS}_{2}

. Physical Review Research. 2023, 5 (1), 013113. https://doi.org/10.1103/physrevresearch.5.013113

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(abstract)

We observe a positive and non-saturating magnetoresistance in bilayer MoS2, in a regime where only one band contributes to electron transport. At low electron density and large perpendicular magnetic field the resistance exceeds by more than one order of magnitude the zero field resistance and rapidly drops with increasing temperature. We attribute this observation to strong electron lo- calization. Both temperature and magnetic field dependence can, at least qualitatively, be described by the Efros-Schlovskii law, predicting the formation of a Coulomb gap in the density of states due to Coulomb interactions. However, the localization length obtained from fitting the temperature dependence exceeds by more than one order of magnitude the one obtained from the magnetic field dependence. We attribute this discrepancy to the presence of a close-by metallic gate, which provides electrostatic screening and thus reduces long-range Coulomb interactions.

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