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説明:

Reservoir computing (RC) is promising for achieving low power consumption neuromorphic devices. In this study, we have developed an all-solid-state electric double layer (EDL) transistor using multilayer MoS2 to realize high-performance physical reservoir computing (PRC). We have demonstrated high-performance of MoS2-based Raman-ion-gating reservoir (MoS2-RIGR), in which gate voltage-dependent resonant Raman scattering spectra of MoS2 were used as computational resources in addition to drain and gate current responses. Our device achieved good performance such as >97% accuracy in various nonlinear waveform transformations and 97.8% accuracy in solving a second-order nonlinear dynamic equation. Information processing capacity was evaluated to elucidate the origin of the high performance of our system.

権利情報:

• In Copyright
  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Yoshitaka Shingaya, Daiki Nishioka, Kazuya Terabe, Takashi Tsuchiya; Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering. Appl. Phys. Lett. 27 October 2025; 127 (17): 173503 and may be found at https://doi.org/10.1063/5.0266816.

キーワード: physical reservoir computing, resonant Raman scattering, MoS2, electric double layer transistor, Raman-ion-gating reservoir

刊行年月日: 2025-10-23

出版者: AIP Publishing

掲載誌:

• Applied Physics Letters (ISSN: 00036951) vol. 127 issue. 17 173503

研究助成金:

• Japan Society for the Promotion of Science JP24KJ0229
• Precursory Research for Embryonic Science and Technology JPMJPR23H4
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1224NM5282
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1225NM5462

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5909

公開URL: https://doi.org/10.1063/5.0266816

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更新時刻: 2025-11-17 12:30:04 +0900

MDRでの公開時刻: 2025-11-17 12:23:04 +0900