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Although infrared detection is of high technological and strategic importance, the narrow-bandgap materials used for infrared detection often suffer from poor air stability and pose environmental hazards. Hot electron-based detectors avoid such issues by using conventional wide bandgap semiconductors and exploiting intraband transition. However, hot electron infrared detectors usually suffer from poor quantum efficiency. By photoexciting MoS2 conduction electrons over a thin barrier layer, here we show that a reversal of the role of the emitter and collector results in a >1000-fold enhancement in the photoresponse compared with a conventional metal/2D semiconductor Schottky diode. We reveal that electron–electron scattering plays a key role in the device performance, which can be effectively tuned by a gate voltage. The photodetector exhibits a nearly flat response up to a measurement wavelength of 1800 nm with a responsivity of 42 mA/W (@1550 nm) at room temperature. We demonstrate an operating frequency of 30 kHz @1550 nm excitation (100 kHz @633 nm). The detector chip is integrated with post-processing electronics in a printed circuit board, making it readily useable for system-level applications─a demonstration of heterogeneous integration of 2D materials with conventional electronics.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Article that appeared in final form in ACS Nano, copyright © 2025 American Chemical Society. To access the final published article, see https://doi.org/10.1021/acsnano.4c14983.

キーワード: Hot electron infrared detector, MoS2, Schottky diode

刊行年月日: 2025-04-15

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Nano (ISSN: 1936086X) vol. 19 issue. 14 p. 13752-13759

研究助成金:

• Science and Engineering Research Board
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052
• Indian Institute of Science Education and Research Pune
• British Telecom India Research Centre
• I-Hub Quantum Technology Foundation
• Karnataka Innovation and Technology Society
• Indian Space Research Organization

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1021/acsnano.4c14983

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更新時刻: 2026-07-06 09:28:20 +0900

MDRでの公開時刻: 2026-07-06 10:29:08 +0900