16 件のレコードが見つかりました。
Heat transport exploration through the GaN/diamond interfaces using machine learning potential
- ジャーナル論文
- 著者
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;Zhanpeng Sun (author) (この著者で検索);Yunfei Song (author) (この著者で検索);Zijun Qi (author) (この著者で検索);Xiang Sun (author) (この著者で検索)Meiyong Liao (author) (この著者で検索)National Institute for Materials Science
;
;Rui Li (author) (この著者で検索)Qijun Wang (author) (この著者で検索)
https://orcid.org/0000-0002-4299-3798
(unauthenticated)
;
;Lijie Li (author) (この著者で検索)Gai Wu (author) (この著者で検索)
https://orcid.org/0000-0002-9726-6328
(unauthenticated)
;
;Wei Shen (author) (この著者で検索)Sheng Liu (author) (この著者で検索) - キーワード
- thermal conductivity, GaN, Diamond
- 刊行年月日
- 2025-01-16
- 更新時刻
- 2025-04-22 12:30:10 +0900
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
- ジャーナル論文
- 著者
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Kongping Wu (author) (この著者で検索)
https://orcid.org/0000-0001-5672-7610
(unauthenticated)
;
;Renxiang Cheng (author) (この著者で検索);Leng Zhang (author) (この著者で検索);Wenxiu Wang (author) (この著者で検索);Fangzhen Li (author) (この著者で検索)Meiyong Liao (author) (この著者で検索)
- キーワード
- diamond, heat spreader, GaN, calculation
- 刊行年月日
- 2024-12-19
- 更新時刻
- 2025-04-22 08:30:20 +0900
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
- ジャーナル論文
- 著者
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Yoshihiro Irokawa (author) (この著者で検索)National Institute for Materials Science
;
Toshihide Nabatame (author) (この著者で検索)National Institute for Materials Science
;
;Tomomi Sawada (author) (この著者で検索)National Institute for Materials Science;Manami Miyamoto (author) (この著者で検索);Hiromi Miura (author) (この著者で検索)Kazuhito Tsukagoshi (author) (この著者で検索)National Institute for Materials Science
;
Yasuo Koide (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN
- 刊行年月日
- 2024-08-01
- 更新時刻
- 2024-09-02 12:30:27 +0900
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
- ジャーナル論文
- 著者
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;Akihiro Shimada (author) (この著者で検索);Haruna Shiomi (author) (この著者で検索)Tetsuya Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (この著者で検索)
;
;Masaya Yamaguchi (author) (この著者で検索)Junpei Yamamoto (author) (この著者で検索)
https://orcid.org/0009-0007-5684-0569
(unauthenticated)
;
Takeaki Hamachi (author) (この著者で検索)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
;
Yasuhiko Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
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;Kazushi Sumitani (author) (この著者で検索)Shigeru Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Shota Kaneki (author) (この著者で検索)
https://orcid.org/0000-0003-0806-8571
(unauthenticated)
;
Tamotsu Hashizume (author) (この著者で検索)
https://orcid.org/0009-0004-8229-9460
(unauthenticated)
;
Akira Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, HEMT, Strain, In situ
- 刊行年月日
- 2025-08-21
- 更新時刻
- 2025-08-23 08:30:23 +0900
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
- ジャーナル論文
- 著者
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;Shigefusa F. Chichibu (author) (この著者で検索)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Kohei Shima (author) (この著者で検索)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Akira Uedono (author) (この著者で検索)Department of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;Shoji Ishibashi (author) (この著者で検索)AIST;Hiroko Iguchi (author) (この著者で検索)TOYOTA CENTRAL R&D LABS., INC.;Tetsuo Narita (author) (この著者で検索)TOYOTA CENTRAL R&D LABS., INC.;Keita Kataoka (author) (この著者で検索)TOYOTA CENTRAL R&D LABS., INC.;Ryo Tanaka (author) (この著者で検索)Fuji Electric Corporation;Shinya Takashima (author) (この著者で検索)Fuji Electric Corporation;Katsunori Ueno (author) (この著者で検索)Fuji Electric Corporation;Masaharu Edo (author) (この著者で検索)Fuji Electric Corporation;Hirotaka Watanabe (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Atsushi Tanaka (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Yoshio Honda (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Jun Suda (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Hiroshi Amano (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Tetsu Kachi (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya UniversityToshihide Nabatame (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)
;
Yoshihiro Irokawa (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
Yasuo Koide (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
- キーワード
- GaN
- 刊行年月日
- 2024-05-14
- 更新時刻
- 2024-05-09 16:30:16 +0900
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
Masataka Imura (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
- キーワード
- GaN, AlInN, etching, positive bevel edge termination
- 刊行年月日
- 2024-08-01
- 更新時刻
- 2024-08-02 12:30:52 +0900
First-principles lattice thermal conductivity calculation for GaN / F-43m (216) / materials id 830
- データセット
- コレクション
- MDR lattice thermal conductivity calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
- キーワード
- Lattice thermal conductivity, GaN
- 刊行年月日
- 更新時刻
- 2026-01-24 12:32:02 +0900
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
- ジャーナル論文
- 著者
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Takahiro Nagata (author) (この著者で検索)
;
Asahiko Matsuda (author) (この著者で検索)
;
Takashi Teramoto (author) (この著者で検索)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
;
Dominic Gerlach (author) (この著者で検索)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
;
Peng Shen (author) (この著者で検索)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
;
Shigenori Ueda (author) (この著者で検索)
;
Takako Kimura (author) (この著者で検索)
https://orcid.org/0009-0007-0109-4482
(unauthenticated)
;
Christian Dussarrat (author) (この著者で検索)
https://orcid.org/0009-0000-1063-6473
(unauthenticated)
;
Toyohiro Chikyow (author) (この著者で検索)
- キーワード
- gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
- 刊行年月日
- 2025-03-07
- 更新時刻
- 2025-03-26 17:26:31 +0900
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
- ジャーナル論文
- 著者
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色川 芳宏 (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
大井 暁彦 (author) (この著者で検索)National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit
;
生田目 俊秀 (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group
;
小出 康夫 (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
- キーワード
- GaN, hydrogen, Schottky barrier height
- 刊行年月日
- 2024-04-01
- 更新時刻
- 2024-04-10 16:30:21 +0900
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
- ジャーナル論文
- 著者
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Yoshihiro Irokawa (author) (この著者で検索)
;
Mamoru Usami (author) (この著者で検索)
https://orcid.org/0009-0002-3188-7380
(unauthenticated)
;
Jun Uzuhashi (author) (この著者で検索)
;
Tadakatsu Ohkubo (author) (この著者で検索)
;
Toshihide Nabatame (author) (この著者で検索)
;
Yasuo Koide (author) (この著者で検索)
- キーワード
- GaN
- 刊行年月日
- 2026-05-01
- 更新時刻
- 2026-05-13 10:14:20 +0900