MDR: NIMS Materials Data Repository

キーワード: Ga2O3

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22 件のレコードが見つかりました。 1件目から10件目まで表示します。

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nohighlight_Si-K-Ga2O3_resubmit_2403011908_revYY.pdf

Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)

ジャーナル論文
著者: Yuhua Tsai (author) (この著者で検索)

https://orcid.org/0000-0001-7996-6681

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group

;

Yusuke Hashimoto (author) (この著者で検索)

NAIST

;

ZeXu Sun (author) (この著者で検索)

NAIST

;

Takuya Moriki (author) (この著者で検索)

NAIST

;

Takashi Tadamura (author) (この著者で検索)

NAIST

;

Takahiro Nagata (author) (この著者で検索)

https://orcid.org/0000-0002-8591-2943

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group

NIMS Researchers Directory SAMURAI

;

Piero Mazzolini (author) (この著者で検索)

University of Parma

;

Antonella Parisini (author) (この著者で検索)

University of Parma

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Matteo Bosi (author) (この著者で検索)

IMEM-CNR

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Luca Seravalli (author) (この著者で検索)

IMEM-CNR

;

Tomohiro Matsushita (author) (この著者で検索)

NAIST

;

Yoshiyuki Yamashita (author) (この著者で検索)

https://orcid.org/0000-0003-0994-8095

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, κ-Ga2O3
刊行年月日: 2024-04-03
更新時刻: 2025-03-07 12:30:11 +0900

Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap

ジャーナル論文
著者: Kazuki Koreishi (author) (この著者で検索)

https://orcid.org/0009-0000-1580-8262 (unauthenticated)

;

Kodai Niitsu (author) (この著者で検索)

https://orcid.org/0000-0002-0430-8868

NIMS Researchers Directory SAMURAI

;

Takuto Soma (author) (この著者で検索)

https://orcid.org/0000-0001-8685-9606 (unauthenticated)

;

Kohei Yoshimatsu (author) (この著者で検索)

https://orcid.org/0000-0001-9288-068X (unauthenticated)

;

Akira Ohtomo (author) (この著者で検索)

https://orcid.org/0000-0003-0300-4712 (unauthenticated)
キーワード: Ga2O3, Wide bandgap, Bandgap engineering
刊行年月日: 2026-07-06
更新時刻: 2026-08-06 09:39:59 +0900

Ab-initio phonon calculation for Ga2O3 / C2/m (12) / materials id 886

データセット
コレクション: MDR phonon calculation database
著者: Atsushi Togo (author) (この著者で検索)

https://orcid.org/0000-0001-8393-9766

National Institute for Materials Science MaDIS

NIMS Researchers Directory SAMURAI
キーワード: Phonon, Ga2O3, C2/m (12)
刊行年月日
更新時刻: 2023-05-14 18:54:18 +0900

Ab-initio phonon calculation for Ga2O3 / R-3c (167) / materials id 1243

データセット
コレクション: MDR phonon calculation database
著者: Atsushi Togo (author) (この著者で検索)

https://orcid.org/0000-0001-8393-9766

National Institute for Materials Science MaDIS

NIMS Researchers Directory SAMURAI
キーワード: Phonon, Ga2O3, R-3c (167)
刊行年月日
更新時刻: 2023-05-14 18:35:31 +0900

(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga ₂ O ₃ homoepitaxial layers on (011) substrates

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI

;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, (011), AFM, TEM
刊行年月日: 2026-07-15
更新時刻: 2026-07-09 10:29:39 +0900

High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer

ジャーナル論文
著者: Qihao Zhang (author) (この著者で検索)

;

Jiangwei Liu (author) (この著者で検索)

https://orcid.org/0000-0003-2580-7401

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

;

Chunming Tu (author) (この著者で検索)

;

Dongyuan Zhai (author) (この著者で検索)

;

Min He (author) (この著者で検索)

;

Jiwu Lu (author) (この著者で検索)
キーワード: Ga2O3, Transistor
刊行年月日: 2023-01-03
更新時刻: 2025-01-04 16:30:50 +0900