5 件のレコードが見つかりました。
Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells
- ジャーナル論文
- 著者
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;Yudai Yamaguchi (author) (この著者で検索);Yuya Kanitani (author) (この著者で検索);Yoshihiro Kudo (author) (この著者で検索)Jun Uzuhashi (author) (この著者で検索)National Institute for Materials Science
;
Tadakatsu Ohkubo (author) (この著者で検索)National Institute for Materials Science
;
Kazuhiro Hono (author) (この著者で検索)National Institute for Materials Science
;
Shigetaka Tomiya (author) (この著者で検索) - キーワード
- InGaN, dislocation, pipe diffusion, atom probe tomography, transmission electron microscopy
- 刊行年月日
- 2022-09-14
- 更新時刻
- 2024-01-05 22:12:51 +0900
Luminescence properties of dislocations in α-Ga2O3
- ジャーナル論文
- 著者
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Mugove Maruzane (author) (この著者で検索)
https://orcid.org/0009-0004-9207-0424
(unauthenticated)
;
Yuichi Oshima (author) (この著者で検索)
;
Olha Makydonska (author) (この著者で検索)
https://orcid.org/0009-0008-5562-2137
(unauthenticated)
;
Paul R Edwards (author) (この著者で検索)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Robert W Martin (author) (この著者で検索)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C-P Massabuau (author) (この著者で検索)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- キーワード
- Ga2O3, dislocation
- 刊行年月日
- 2025-01-20
- 更新時刻
- 2024-11-13 08:31:40 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- ジャーナル論文
- 著者
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Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
Takashi Shinohe (author) (この著者で検索)FLOSFIA INC.
- キーワード
- Ga2O3, dislocation, HVPE, ELO
- 刊行年月日
- 2025-05-19
- 更新時刻
- 2025-05-21 16:30:09 +0900