Uncovering crystal structure evolution via nanobeam X-ray diffraction with a continuity-driven machine learning approach
- ジャーナル論文
- 著者
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Zhendong Wu (author) (この著者で検索)
https://orcid.org/0000-0002-9882-4133
(unauthenticated)
;
Tetsuya Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (この著者で検索)
;
;Shigeyoshi Usami (author) (この著者で検索);Masayuki Imanishi (author) (この著者で検索);Yusuke Mori (author) (この著者で検索);Junichi Takino (author) (この著者で検索);Kazushi Sumitani (author) (この著者で検索)Yasuhiko Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
Shigeru Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Akira Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, nanoXRD, ML
- 刊行年月日
- 2026-02-15
- 更新時刻
- 2026-02-26 12:30:06 +0900
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
- ジャーナル論文
- 著者
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;Akihiro Shimada (author) (この著者で検索);Haruna Shiomi (author) (この著者で検索)Tetsuya Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (この著者で検索)
;
;Masaya Yamaguchi (author) (この著者で検索)Junpei Yamamoto (author) (この著者で検索)
https://orcid.org/0009-0007-5684-0569
(unauthenticated)
;
Takeaki Hamachi (author) (この著者で検索)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
;
Yasuhiko Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
;Kazushi Sumitani (author) (この著者で検索)Shigeru Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Shota Kaneki (author) (この著者で検索)
https://orcid.org/0000-0003-0806-8571
(unauthenticated)
;
Tamotsu Hashizume (author) (この著者で検索)
https://orcid.org/0009-0004-8229-9460
(unauthenticated)
;
Akira Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, HEMT, Strain, In situ
- 刊行年月日
- 2025-08-21
- 更新時刻
- 2025-08-23 08:30:23 +0900
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
Masataka Imura (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
- キーワード
- GaN, AlInN, etching, positive bevel edge termination
- 刊行年月日
- 2024-08-01
- 更新時刻
- 2024-08-02 12:30:52 +0900
Continuous real-time O 1s core XPS spectra of initial O2 molecule adsorption on polar and m-plane surfaces of GaN
- データセット
- 著者
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SUMIYA, Masatomo (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, Gallium nitride, Oxidation, Adsorption, XPS, SPring-8
- 刊行年月日
- 2020-11-19
- 更新時刻
- 2024-01-05 22:13:22 +0900
Heat transport exploration through the GaN/diamond interfaces using machine learning potential
- ジャーナル論文
- 著者
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;Zhanpeng Sun (author) (この著者で検索);Yunfei Song (author) (この著者で検索);Zijun Qi (author) (この著者で検索);Xiang Sun (author) (この著者で検索)Meiyong Liao (author) (この著者で検索)National Institute for Materials Science
;
;Rui Li (author) (この著者で検索)Qijun Wang (author) (この著者で検索)
https://orcid.org/0000-0002-4299-3798
(unauthenticated)
;
;Lijie Li (author) (この著者で検索)Gai Wu (author) (この著者で検索)
https://orcid.org/0000-0002-9726-6328
(unauthenticated)
;
;Wei Shen (author) (この著者で検索)Sheng Liu (author) (この著者で検索)
- キーワード
- thermal conductivity, GaN, Diamond
- 刊行年月日
- 2025-01-16
- 更新時刻
- 2025-04-22 12:30:10 +0900
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
- ジャーナル論文
- 著者
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Kongping Wu (author) (この著者で検索)
https://orcid.org/0000-0001-5672-7610
(unauthenticated)
;
;Renxiang Cheng (author) (この著者で検索);Leng Zhang (author) (この著者で検索);Wenxiu Wang (author) (この著者で検索);Fangzhen Li (author) (この著者で検索)Meiyong Liao (author) (この著者で検索)
- キーワード
- diamond, heat spreader, GaN, calculation
- 刊行年月日
- 2024-12-19
- 更新時刻
- 2025-04-22 08:30:20 +0900
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
- ジャーナル論文
- 著者
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Yoshihiro Irokawa (author) (この著者で検索)National Institute for Materials Science
;
Toshihide Nabatame (author) (この著者で検索)National Institute for Materials Science
;
;Tomomi Sawada (author) (この著者で検索)National Institute for Materials Science;Manami Miyamoto (author) (この著者で検索);Hiromi Miura (author) (この著者で検索)Kazuhito Tsukagoshi (author) (この著者で検索)National Institute for Materials Science
;
Yasuo Koide (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN
- 刊行年月日
- 2024-08-01
- 更新時刻
- 2024-09-02 12:30:27 +0900
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
- ジャーナル論文
- 著者
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;Shigefusa F. Chichibu (author) (この著者で検索)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Kohei Shima (author) (この著者で検索)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Akira Uedono (author) (この著者で検索)Department of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;Shoji Ishibashi (author) (この著者で検索)AIST;Hiroko Iguchi (author) (この著者で検索)TOYOTA CENTRAL R&D LABS., INC.;Tetsuo Narita (author) (この著者で検索)TOYOTA CENTRAL R&D LABS., INC.;Keita Kataoka (author) (この著者で検索)TOYOTA CENTRAL R&D LABS., INC.;Ryo Tanaka (author) (この著者で検索)Fuji Electric Corporation;Shinya Takashima (author) (この著者で検索)Fuji Electric Corporation;Katsunori Ueno (author) (この著者で検索)Fuji Electric Corporation;Masaharu Edo (author) (この著者で検索)Fuji Electric Corporation;Hirotaka Watanabe (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Atsushi Tanaka (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Yoshio Honda (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Jun Suda (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Hiroshi Amano (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Tetsu Kachi (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya UniversityToshihide Nabatame (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)
;
Yoshihiro Irokawa (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
Yasuo Koide (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
- キーワード
- GaN
- 刊行年月日
- 2024-05-14
- 更新時刻
- 2024-05-09 16:30:16 +0900
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
- ジャーナル論文
- 著者
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Masahiro Hara (author) (この著者で検索)
https://orcid.org/0000-0001-9748-8011
(unauthenticated)
;
Toshihide Nabatame (author) (この著者で検索)
;
Yoshihiro Irokawa (author) (この著者で検索)
;
;Tomomi Sawada (author) (この著者で検索);Manami Miyamoto (author) (この著者で検索);Hiromi Miura (author) (この著者で検索);Tsunenobu Kimoto (author) (この著者で検索)Yasuo Koide (author) (この著者で検索)
- キーワード
- GaN
- 刊行年月日
- 2025-05-07
- 更新時刻
- 2025-05-08 12:30:16 +0900
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
- ジャーナル論文
- 著者
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色川 芳宏 (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
大井 暁彦 (author) (この著者で検索)National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit
;
生田目 俊秀 (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group
;
小出 康夫 (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
- キーワード
- GaN, hydrogen, Schottky barrier height
- 刊行年月日
- 2024-04-01
- 更新時刻
- 2024-04-10 16:30:21 +0900