Vacancy-type defects introduced by mechanical polishing in ammonothermal GaN studied by a monoenergetic positron beam
- ジャーナル論文
- 著者
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Akira Uedono (author) (この著者で検索)
https://orcid.org/0000-0001-6224-4869
(unauthenticated)
;
Shoji Ishibashi (author) (この著者で検索)
https://orcid.org/0000-0002-4896-3530
(unauthenticated)
;
Kohei Shima (author) (この著者で検索)
https://orcid.org/0000-0003-0967-141X
(unauthenticated)
;
;Shigefusa F. Chichibu (author) (この著者で検索)Kacper Sierakowski (author) (この著者で検索)
https://orcid.org/0000-0002-9447-1182
(unauthenticated)
;
Makoto Oishi (author) (この著者で検索)
https://orcid.org/0000-0003-3402-4556
(unauthenticated)
;
Noriyuki Okada (author) (この著者で検索)
https://orcid.org/0009-0002-0090-5646
(unauthenticated)
;
Takuro Nagai (author) (この著者で検索)
;
Michal Bockowski (author) (この著者で検索)
https://orcid.org/0000-0003-1616-685X
(unauthenticated)
- キーワード
- Mechanical polishing, GaN, Vacancy, Defect, Positron annihilation
- 刊行年月日
- 2026-04-12
- 更新時刻
- 2026-04-20 08:56:29 +0900
First-principles lattice thermal conductivity calculation for GaN / P6_3mc (186) / materials id 804
- データセット
- コレクション
- MDR lattice thermal conductivity calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
- キーワード
- Lattice thermal conductivity, GaN
- 刊行年月日
- 更新時刻
- 2026-01-24 15:02:16 +0900
First-principles lattice thermal conductivity calculation for GaN / F-43m (216) / materials id 830
- データセット
- コレクション
- MDR lattice thermal conductivity calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
- キーワード
- Lattice thermal conductivity, GaN
- 刊行年月日
- 更新時刻
- 2026-01-24 12:32:02 +0900
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
- ジャーナル論文
- 著者
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;Akihiro Shimada (author) (この著者で検索);Haruna Shiomi (author) (この著者で検索)Tetsuya Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (この著者で検索)
;
;Masaya Yamaguchi (author) (この著者で検索)Junpei Yamamoto (author) (この著者で検索)
https://orcid.org/0009-0007-5684-0569
(unauthenticated)
;
Takeaki Hamachi (author) (この著者で検索)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
;
Yasuhiko Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
;Kazushi Sumitani (author) (この著者で検索)Shigeru Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Shota Kaneki (author) (この著者で検索)
https://orcid.org/0000-0003-0806-8571
(unauthenticated)
;
Tamotsu Hashizume (author) (この著者で検索)
https://orcid.org/0009-0004-8229-9460
(unauthenticated)
;
Akira Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, HEMT, Strain, In situ
- 刊行年月日
- 2025-08-21
- 更新時刻
- 2025-08-23 08:30:23 +0900
Reducing vertex radius of curvature for 100 nm size square and triangular holes in GaN by shape modification
- ジャーナル論文
- 著者
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;Kohei Tuzuku (author) (この著者で検索)Masataka Imura (author) (この著者で検索)
;
Hironori Okumura (author) (この著者で検索)
https://orcid.org/0000-0002-5464-9169
(unauthenticated)
- キーワード
- GaN, EB lithography
- 刊行年月日
- 2025-06-01
- 更新時刻
- 2025-12-26 10:20:58 +0900
Heat transport exploration through the GaN/diamond interfaces using machine learning potential
- ジャーナル論文
- 著者
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;Zhanpeng Sun (author) (この著者で検索);Yunfei Song (author) (この著者で検索);Zijun Qi (author) (この著者で検索);Xiang Sun (author) (この著者で検索)Meiyong Liao (author) (この著者で検索)National Institute for Materials Science
;
;Rui Li (author) (この著者で検索)Qijun Wang (author) (この著者で検索)
https://orcid.org/0000-0002-4299-3798
(unauthenticated)
;
;Lijie Li (author) (この著者で検索)Gai Wu (author) (この著者で検索)
https://orcid.org/0000-0002-9726-6328
(unauthenticated)
;
;Wei Shen (author) (この著者で検索)Sheng Liu (author) (この著者で検索)
- キーワード
- thermal conductivity, GaN, Diamond
- 刊行年月日
- 2025-01-16
- 更新時刻
- 2025-04-22 12:30:10 +0900
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
- ジャーナル論文
- 著者
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;Hironori Okumura (author) (この著者で検索);Yohei Ogawara (author) (この著者で検索);Manabu Togawa (author) (この著者で検索);Masaya Miyahara (author) (この著者で検索);Tadaaki Isobe (author) (この著者で検索);Kosuke Itabashi (author) (この著者で検索);Jiro Nishinaga (author) (この著者で検索)Masataka Imura (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Proton, Xe, Radiation irradiations, GaN
- 刊行年月日
- 2023-06-01
- 更新時刻
- 2024-08-24 08:30:18 +0900
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
Masataka Imura (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
- キーワード
- GaN, AlInN, etching, positive bevel edge termination
- 刊行年月日
- 2024-08-01
- 更新時刻
- 2024-08-02 12:30:52 +0900
Classification for transmission electron microscope images from different amorphous states using persistent homology
- ジャーナル論文
- 著者
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Fumihiko Uesugi (author) (この著者で検索)National Institute for Materials Science
;
Masashi Ishii (author) (この著者で検索)National Institute for Materials Science
- キーワード
- TEM image simulation, GaN, persistent homology, Amorphous structure
- 刊行年月日
- 2022-06-06
- 更新時刻
- 2024-07-04 16:32:11 +0900
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
- ジャーナル論文
- 著者
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色川 芳宏 (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
大井 暁彦 (author) (この著者で検索)National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit
;
生田目 俊秀 (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group
;
小出 康夫 (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
- キーワード
- GaN, hydrogen, Schottky barrier height
- 刊行年月日
- 2024-04-01
- 更新時刻
- 2024-04-10 16:30:21 +0900