Epitaxial relationship of NiO on (-102) β-Ga2O3
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Shinji Nakagomi (author) (この著者で検索)Ishinomaki Senshu University Faculty of Science and Engineering - キーワード
- Ga2O3, NiO, epitaxial relationship
- 刊行年月日
- 2023-12-01
- 更新時刻
- 2024-11-23 16:30:35 +0900
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, HCl gas etching
- 刊行年月日
- 2023-06-01
- 更新時刻
- 2024-06-15 08:30:13 +0900
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, selective area growth
- 刊行年月日
- 2022-07-01
- 更新時刻
- 2024-01-05 22:13:27 +0900
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
- ジャーナル論文
- 著者
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Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, lithography
- 刊行年月日
- 2023-01-01
- 更新時刻
- 2024-01-24 11:20:15 +0900
High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
- ジャーナル論文
- 著者
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;Qihao Zhang (author) (この著者で検索)Jiangwei Liu (author) (この著者で検索)National Institute for Materials Science
;
;Chunming Tu (author) (この著者で検索);Dongyuan Zhai (author) (この著者で検索);Min He (author) (この著者で検索)Jiwu Lu (author) (この著者で検索)
- キーワード
- Ga2O3, Transistor
- 刊行年月日
- 2023-01-03
- 更新時刻
- 2025-01-04 16:30:50 +0900