キーワード: GaN

16 件のレコードが見つかりました。

Okumura_2023_Jpn._J._Appl._Phys._62_064001 (1).pdf
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
ジャーナル論文
著者
Hironori Okumura (author) (この著者で検索)
;
Yohei Ogawara (author) (この著者で検索)
;
Manabu Togawa (author) (この著者で検索)
;
Masaya Miyahara (author) (この著者で検索)
;
Tadaaki Isobe (author) (この著者で検索)
;
Kosuke Itabashi (author) (この著者で検索)
;
Jiro Nishinaga (author) (この著者で検索)
;
Masataka Imura (author) (この著者で検索)
ORCID SAMURAI
キーワード
Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Proton, Xe, Radiation irradiations, GaN
刊行年月日
2023-06-01
更新時刻
2024-08-24 08:30:18 +0900

Shimada_transistor_nanoXRD-JAP-250704rev2-marked.pdf
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
ジャーナル論文
著者
Akihiro Shimada (author) (この著者で検索)
;
Haruna Shiomi (author) (この著者で検索)
;
Tetsuya Tohei (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
Masaya Yamaguchi (author) (この著者で検索)
;
Junpei Yamamoto (author) (この著者で検索)
ORCID ;
Takeaki Hamachi (author) (この著者で検索)
ORCID ;
Yasuhiko Imai (author) (この著者で検索)
ORCID ;
Kazushi Sumitani (author) (この著者で検索)
;
Shigeru Kimura (author) (この著者で検索)
ORCID ;
Shota Kaneki (author) (この著者で検索)
ORCID ;
Tamotsu Hashizume (author) (この著者で検索)
ORCID ;
Akira Sakai (author) (この著者で検索)
ORCID
キーワード
GaN, HEMT, Strain, In situ
刊行年月日
2025-08-21
更新時刻
2025-08-23 08:30:23 +0900

paper.pdf
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI ;
Masataka Imura (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI
キーワード
GaN, AlInN, etching, positive bevel edge termination
刊行年月日
2024-08-01
更新時刻
2024-08-02 12:30:52 +0900

Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_045002.pdf
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
ジャーナル論文
著者
色川 芳宏 (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
大井 暁彦 (author) (この著者で検索)
National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit
ORCID SAMURAI ;
生田目 俊秀 (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group
ORCID SAMURAI ;
小出 康夫 (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI
キーワード
GaN, hydrogen, Schottky barrier height
刊行年月日
2024-04-01
更新時刻
2024-04-10 16:30:21 +0900

Hamachi 2024 JAP GaN dislocation nanoXRD Na-flux HVPE MDR.pdf
Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
ジャーナル論文
著者
T. Hamachi (author) (この著者で検索)
ORCID ;
T. Tohei (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
S. Usami (author) (この著者で検索)
ORCID ;
M. Imanishi (author) (この著者で検索)
;
Y. Mori (author) (この著者で検索)
;
K. Sumitani (author) (この著者で検索)
;
Y. Imai (author) (この著者で検索)
ORCID ;
S. Kimura (author) (この著者で検索)
ORCID ;
A. Sakai (author) (この著者で検索)
ORCID
キーワード
GaN, Dislocation, SPring-8
刊行年月日
2024-06-14
更新時刻
2024-12-05 12:47:52 +0900

[Vol. 68]New GaN MEMS Resonator Is Temperature-Stable up to 600 K_ WPI-MANA.pdf
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
雑誌
コレクション
Research Highlights
著者
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)
National Institute for Materials Science
キーワード
GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
刊行年月日
2021-07-13
更新時刻
2023-12-26 21:38:08 +0900