26 records found.
耐圧1.7 kV超のノーマリーオフ型ホウ素ドープダイヤモンド金属–酸化膜–半導体電界効果トランジスタ
- Journal article
- Creator
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劉 江偉 (author) (Search by this author)電子・光機能材料研究センター/光学材料分野/半導体欠陥制御グループ, 物質・材料研究機構
;
寺地 徳之 (author) (Search by this author)電子・光機能材料研究センター/光学材料分野/半導体欠陥制御グループ, 物質・材料研究機構
;
達 博 (author) (Search by this author)マテリアル基盤研究センター/先端解析分野/量子ビーム回折グループ, 物質・材料研究機構
;
小出 康夫 (author) (Search by this author)名城大学 - Keyword
- diamond
- Date published
- 2026-01-25
- Updated at
- 2026-07-21 17:18:19 +0900
Impact of doping profile on electrical performance of boron-doped diamond metal–oxide–semiconductor field-effect transistors
- Journal article
- Creator
-
J. Liu (author) (Search by this author)
;
T. Teraji (author) (Search by this author)
- Keyword
- diamond
- Date published
- 2026-07-14
- Updated at
- 2026-07-14 10:52:28 +0900
Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors
- Journal article
- Creator
-
Jiangwei Liu (author) (Search by this author)
- Keyword
- diamond
- Date published
- 2025-12-31
- Updated at
- 2025-10-31 12:30:17 +0900
Normally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV
- Journal article
- Creator
-
J. Liu (author) (Search by this author)
;
T. Teraji (author) (Search by this author)
;
B. Da (author) (Search by this author)
;
Y. Koide (author) (Search by this author)
- Keyword
- diamond
- Date published
- 2025-07-28
- Updated at
- 2025-09-05 12:30:23 +0900
Binding energy calibration for diamond with Au4f during the XPS measurement
- Journal article
- Creator
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劉 江偉 (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
;
寺地 徳之 (author) (Search by this author)Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Defect Design Group, National Institute for Materials Science
;
達 博 (author) (Search by this author)Center for Basic Research on Materials/Advanced Materials Characterization Field/Quantum Beam Diffraction Group, National Institute for Materials Science
;
小出 康夫 (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
- Keyword
- diamond
- Date published
- [2025年4月]
- Updated at
- 2025-05-07 16:30:15 +0900
Boron-doped diamond MOSFETs operating at temperatures up to 400°C
- Journal article
- Creator
-
Jiangwei Liu (author) (Search by this author)
;
Tokuyuki Teraji (author) (Search by this author)
;
Bo Da (author) (Search by this author)
;
Yasuo Koide (author) (Search by this author)
- Keyword
- Boron-doped diamond
- Date published
- 2025-12-31
- Updated at
- 2025-03-05 16:30:11 +0900
Exploring high-symmetry structures in non-Cartesian coordinates: preparation and characteristics of cylindrically symmetric-rotating crystals
- Journal article
- Creator
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Bo Da (author) (Search by this author)National Institute for Materials Science
;
Long Cheng (author) (Search by this author)
https://orcid.org/0000-0001-9599-2257
(unauthenticated)
;
;Xun Liu (author) (Search by this author);Kunji Shigeto (author) (Search by this author);Zihang Zhang (author) (Search by this author)Kazuhito Tsukagoshi (author) (Search by this author)National Institute for Materials Science
;
Toshihide Nabatame (author) (Search by this author)National Institute for Materials Science
;
Zejun Ding (author) (Search by this author)
https://orcid.org/0000-0001-5767-1145
(unauthenticated)
;
Jiangwei Liu (author) (Search by this author)National Institute for Materials Science
;
Hideki Yoshikawa (author) (Search by this author)National Institute for Materials Science
;
Shigeo Tanuma (author) (Search by this author)
- Keyword
- cylindrically symmetric-rotating crystals, SEM, thin film, Indium oxide
- Date published
- 2024-12-31
- Updated at
- 2024-11-13 08:30:53 +0900
Calibration of binding energy and clarification of interfacial band bending for the Al2O3/diamond heterojunction
- Journal article
- Creator
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J. W. Liu (author) (Search by this author)National Institute for Materials Science
;
T. Teraji (author) (Search by this author)National Institute for Materials Science
;
B. Da (author) (Search by this author)National Institute for Materials Science
;
Y. Koide (author) (Search by this author)National Institute for Materials Science
- Keyword
- binding energy calibration, carbon-related materials, XPS, diamond, Band bending
- Date published
- 2024-09-02
- Updated at
- 2024-09-13 12:30:32 +0900
Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits
- Book
- Creator
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Jiangwei Liu (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
;
Yasuo Koide (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
- Keyword
- diamond
- Date published
- 2024-05-22
- Updated at
- 2025-05-22 08:30:45 +0900
Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs
- Journal article
- Creator
-
Jiangwei Liu (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS)
;
Tokuyuki Teraji (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS)
;
Bo Da (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
;
Yasuo Koide (author) (Search by this author)National Institute for Materials Science (NIMS)
- Keyword
- Boron-doped diamond
- Date published
- 2024-01-30
- Updated at
- 2024-03-19 16:57:34 +0900