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説明:

Boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated on a 150 nm-thick epitaxial layer. The threshold voltage of the B-diamond MOSFET is measured at -8.0 V, indicating a normally-off behavior. Due to the high activation energy for the boron dopants and the relatively thin epitaxial layer, a limited number of holes are formed in the B-diamond and potentially trapped within the Al2O3/B-diamond interface, leading to the normally-off behavior observed in the B-diamond MOSFET. The absolute breakdown voltage for the B-diamond MOSFET is found to exceed 1.7 kV. When divided by the gate-to-drain electrode length of 11.3 μm, the breakdown field is calculated to be 1.52 MV/cm, which is more than two times larger than that of the previous B-diamond MOSFETs.

権利情報:

• In Copyright
  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. Liu, T. Teraji, B. Da, Y. Koide; Normally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV. Appl. Phys. Lett. 28 July 2025; 127 (4): 042601 and may be found at https://doi.org/10.1063/5.0278392.

キーワード: diamond

刊行年月日: 2025-07-28

出版者: AIP Publishing

掲載誌:

• Applied Physics Letters (ISSN: 00036951) vol. 127 issue. 4 042601

研究助成金:

• Japan Society for the Promotion of Science JP23K03966
• Japan Society for the Promotion of Science 20H05661
• Japan Society for the Promotion of Science and JP20H00313
• Ministry of Education, Culture, Sports, Science and Technology JPMXS0118068379
• Japan Science and Technology Agency JPMJCR1773
• Japan Science and Technology Agency JPMJMS2062
• Japan Science and Technology Agency 23WS0311
• Japan Science and Technology Agency 23NM5006

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5730

公開URL: https://doi.org/10.1063/5.0278392

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更新時刻: 2025-09-05 12:30:23 +0900

MDRでの公開時刻: 2025-09-05 12:18:52 +0900