Article Normally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV

J. Liu SAMURAI ORCID ; T. Teraji SAMURAI ORCID ; B. Da SAMURAI ORCID ; Y. Koide

manuscript.pdf
Download file (655 KB)
Download as zip (574 KB)
Collection

Citation
J. Liu, T. Teraji, B. Da, Y. Koide. Normally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV. Applied Physics Letters. 2025, 127 (4), 042601. https://doi.org/10.1063/5.0278392

Description:

(abstract)

Boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated on a 150 nm-thick epitaxial layer. The threshold voltage of the B-diamond MOSFET is measured at -8.0 V, indicating a normally-off behavior. Due to the high activation energy for the boron dopants and the relatively thin epitaxial layer, a limited number of holes are formed in the B-diamond and potentially trapped within the Al2O3/B-diamond interface, leading to the normally-off behavior observed in the B-diamond MOSFET. The absolute breakdown voltage for the B-diamond MOSFET is found to exceed 1.7 kV. When divided by the gate-to-drain electrode length of 11.3 μm, the breakdown field is calculated to be 1.52 MV/cm, which is more than two times larger than that of the previous B-diamond MOSFETs.

Rights:

  • In Copyright

    This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. Liu, T. Teraji, B. Da, Y. Koide; Normally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV. Appl. Phys. Lett. 28 July 2025; 127 (4): 042601 and may be found at https://doi.org/10.1063/5.0278392.

Keyword: diamond

Date published: 2025-07-28

Publisher: AIP Publishing

Journal:

  • Applied Physics Letters (ISSN: 00036951) vol. 127 issue. 4 042601

Funding:

  • Japan Society for the Promotion of Science JP23K03966
  • Japan Society for the Promotion of Science 20H05661
  • Japan Society for the Promotion of Science and JP20H00313
  • Ministry of Education, Culture, Sports, Science and Technology JPMXS0118068379
  • Japan Science and Technology Agency JPMJCR1773
  • Japan Science and Technology Agency JPMJMS2062
  • Japan Science and Technology Agency 23WS0311
  • Japan Science and Technology Agency 23NM5006

Manuscript type: Author's original (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5730

First published URL: https://doi.org/10.1063/5.0278392

Related item:

Other identifier(s):

Contact agent:

Updated at: 2025-09-05 12:30:23 +0900

Published on MDR: 2025-09-05 12:18:52 +0900

Filename Size
Filename manuscript.pdf (Thumbnail)
application/pdf 		Size 655 KB Detail