J. W. Liu
(National Institute for Materials Science)
;
T. Teraji
(National Institute for Materials Science)
;
B. Da
(National Institute for Materials Science)
;
Y. Koide
(National Institute for Materials Science)
説明:
(abstract)Due to the presence of an intrinsic C 1s peak in diamond, it is impossible to calibrate its binding energies using the adventitious C 1s peak (284.8 eV) during X-ray photoelectron spectroscopy measurement. The absence of accurate binding energy measurement makes it challenging to determine the interfacial band bending for the oxide/diamond heterojunction. To overcome this issue, a net-patterned gold (Au) mask is applied to the boron-doped diamond (B-diamond) to suppress the charge-up effect and calibrate the binding energy using the standard Au 4f peak (83.96 eV). The B-diamond epitaxial layer shows downward band bending towards the surface with valence band maximum of 0.85 eV. Upon the formation of Al2O3 using an ozone precursor through the atomic layer deposition technique, the B-diamond continues to exhibit downward band bending towards the Al2O3/B-diamond interface. However, the bending energy has reduced, potentially attributed to the modification of the oxygen vacancies on the B-diamond surface by the ozone precursor during the Al2O3 deposition.
権利情報:
キーワード: binding energy calibration, carbon-related materials, XPS, diamond, Band bending
刊行年月日: 2024-09-02
出版者: AIP Publishing
掲載誌:
研究助成金:
原稿種別: 査読前原稿 (Author's original)
MDR DOI: https://doi.org/10.48505/nims.4748
公開URL: https://doi.org/10.1063/5.0230817
関連資料:
その他の識別子:
連絡先:
更新時刻: 2024-09-13 12:30:32 +0900
MDRでの公開時刻: 2024-09-13 12:30:32 +0900
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manuscript.pdf
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application/pdf |
サイズ | 758KB | 詳細 |