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The boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400 ℃. The SiO2 serves as the gate oxide insulator, while the Ti/Pt bilayer is employed as the gate contact metal. As the operating temperature rises from room temperature (RT) to 400 ℃, the absolute drain current for the B-diamond MOSFET increases from 3.9 μA mm-1 to 177.4 μA mm-1. Conversely, the on-resistance decreases significantly from 1469.8 kΩ mm to 16.5 kΩ mm. The on/off ratio for the MOSFET at RT is 1.9 × 105, which increases to over 5.0 × 106 at temperatures exceeding 100 ℃. The threshold voltage exhibits a decreasing trend, though it deviates from this trend at 300 ℃. The subthreshold voltage and extrinsic transconductance maximum show increasing trends from 113 mV dec-1 to 299 mV dec-1 and from 0.9 μS mm-1 to 23.1 μS mm-1, respectively. The interfacial trapped charge density is found to be stable in the range of 8.0 × 1011 ~ 2.3 × 1012 eV-1 cm-2.

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• In Copyright
  This is an original manuscript of an article published by Taylor & Francis in Functional Diamond on Jan. 19, 2025, available at: https://doi.org/10.1080/26941112.2025.2450513.

Keyword: Boron-doped diamond

Date published: 2025-12-31

Publisher: Informa UK Limited

Journal:

• Functional Diamond (ISSN: 26941112) vol. 5 issue. 1

Funding:

• Ministry of Education, Culture, Sports, Science and Technology

Manuscript type: Author's original (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5356

First published URL: https://doi.org/10.1080/26941112.2025.2450513

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Updated at: 2025-03-05 16:30:11 +0900

Published on MDR: 2025-03-05 16:30:12 +0900