17 records found.
Zr-Based Contacts to n-Type AlN With Improved Performance for Power and High-Temperature Electronics
- Journal article
- Creator
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;Zhongyunshen Zhu (author) (Search by this author);Hridibrata Pal (author) (Search by this author);Aditya Dev Varma (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
;Hironori Okumura (author) (Search by this author)Tomás Palacios (author) (Search by this author) - Keyword
- AlN, Zr-based ohmic contact, High-Temperature Electronics, High-temperature electronics, Schottky barrier diode
- Date published
- 2026-04-20
- Updated at
- 2026-06-19 13:22:46 +0900
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
- Journal article
- Creator
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Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
;
Takaaki Mano (author) (Search by this author)National Institute for Materials Science
;
;Yuri Itokazu (author) (Search by this author)Masafumi Jo (author) (Search by this author)
- Keyword
- MOVPE, GaN, InN, InGaN, XRD, Superlattice
- Date published
- 2026-03-21
- Updated at
- 2026-04-03 09:31:08 +0900
Infrared Near-Field Spectroscopy of AlGaN/GaN Heterostructures for Probing Two-Dimensional Electron Gas
- Journal article
- Creator
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Ilario Bisignano (author) (Search by this author)National Institute for Materials Science
;
Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Nicholaus Kevin Tanjaya (author) (Search by this author)National Institute for Materials Science
;
;Ming-Jyun Ye (author) (Search by this author);Noriyuki Okada (author) (Search by this author)National Institute for Materials ScienceSatoshi Ishii (author) (Search by this author)National Institute for Materials Science
- Keyword
- Two-dimensional electron gas, AlGaN/GaN, Nano-FTIR, Infrared spectroscopy
- Date published
- 2025-09-03
- Updated at
- 2025-11-10 12:30:06 +0900
Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor
- Journal article
- Creator
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Yosuke Sasama (author) (Search by this author)
;
Takuya Iwasaki (author) (Search by this author)
;
Masataka Imura (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
;
Yamaguchi Takahide (author) (Search by this author)
- Keyword
- diamond, field-effect transistors, hexagonal boron nitride
- Date published
- 2025-10-06
- Updated at
- 2025-10-21 16:06:02 +0900
Reducing vertex radius of curvature for 100 nm size square and triangular holes in GaN by shape modification
- Journal article
- Creator
-
;Kohei Tuzuku (author) (Search by this author)Masataka Imura (author) (Search by this author)
;
Hironori Okumura (author) (Search by this author)
https://orcid.org/0000-0002-5464-9169
(unauthenticated)
- Keyword
- GaN, EB lithography
- Date published
- 2025-06-01
- Updated at
- 2025-12-26 10:20:58 +0900
Development of high radiation tolerance detector with CIGS
- Journal article
- Creator
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K. Itabashi (author) (Search by this author)
https://orcid.org/0000-0002-6766-4704
(unauthenticated)
;
M. Togawa (author) (Search by this author)
https://orcid.org/0000-0002-1128-4200
(unauthenticated)
;
J. Nishinaga (author) (Search by this author)
https://orcid.org/0000-0001-6059-1269
(unauthenticated)
;
M. Miyahara (author) (Search by this author)
https://orcid.org/0000-0002-5748-5921
(unauthenticated)
;
H. Okumura (author) (Search by this author)
https://orcid.org/0000-0002-5464-9169
(unauthenticated)
;
M. Imura (author) (Search by this author)
;
T. Isobe (author) (Search by this author)
https://orcid.org/0000-0001-5163-030X
(unauthenticated)
- Keyword
- Cu(In, Ga)Se2, High radiation tolerance detector, HIMAC, DLTS
- Date published
- 2025-06-01
- Updated at
- 2025-12-26 10:12:43 +0900
Photo-response performance regulation of a type-Ib diamond-based photodetector by H2 annealing and ozone treatment
- Journal article
- Creator
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Keyun Gu (author) (Search by this author)
https://orcid.org/0000-0002-7505-7744
(unauthenticated)
;
;Zilong Zhang (author) (Search by this author)Takeo Ohsawa (author) (Search by this author)
;
Masataka Imura (author) (Search by this author)
;
;Jian Huang (author) (Search by this author);Yasuo Koide (author) (Search by this author)Meiyong Liao (author) (Search by this author)
- Keyword
- Diamond, photodetector
- Date published
- 2025-02-13
- Updated at
- 2025-05-19 13:32:05 +0900
Fully vertical AlN-on-SiC Schottky barrier diodes
- Journal article
- Creator
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Hironori Okumura (author) (Search by this author)
https://orcid.org/0000-0002-5464-9169
(unauthenticated)
;
Masataka Imura (author) (Search by this author)
;
;Fuga Miyazawa (author) (Search by this author)Lorenzo Mainini (author) (Search by this author)
- Keyword
- AlN, 4H-SiC, Schottky barrier diodes
- Date published
- 2024-10-01
- Updated at
- 2025-10-21 15:50:30 +0900
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
- Journal article
- Creator
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;Hironori Okumura (author) (Search by this author);Yohei Ogawara (author) (Search by this author);Manabu Togawa (author) (Search by this author);Masaya Miyahara (author) (Search by this author);Tadaaki Isobe (author) (Search by this author);Kosuke Itabashi (author) (Search by this author);Jiro Nishinaga (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
- Keyword
- Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Proton, Xe, Radiation irradiations, GaN
- Date published
- 2023-06-01
- Updated at
- 2024-08-24 08:30:18 +0900
A high-performance deep reservoir computer experimentally demonstrated with ion-gating reservoirs
- Journal article
- Creator
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Daiki Nishioka (author) (Search by this author)National Institute for Materials Science
;
Takashi Tsuchiya (author) (Search by this author)National Institute for Materials Science
;
Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Yasuo Koide (author) (Search by this author)National Institute for Materials Science
;
;Tohru Higuchi (author) (Search by this author)Kazuya Terabe (author) (Search by this author)National Institute for Materials Science
- Keyword
- Deep reservoir computing, Reservoir computing, Ion-gating reservoir, Electric double layer transistor
- Date published
- 2024-06-19
- Updated at
- 2024-08-05 12:30:25 +0900