ジャーナル論文 Development of high radiation tolerance detector with CIGS
K. Itabashi (author) (この著者で検索)
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M. Togawa (author) (この著者で検索)
ORCID ;
J. Nishinaga (author) (この著者で検索)
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M. Miyahara (author) (この著者で検索)
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H. Okumura (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
T. Isobe (author) (この著者で検索)
ORCID
コレクション

引用
K. Itabashi, M. Togawa, J. Nishinaga, M. Miyahara, H. Okumura, M. Imura, T. Isobe. Development of high radiation tolerance detector with CIGS. Journal of Instrumentation. 2025, 20 (06), . https://doi.org/10.1088/1748-0221/20/06/c06023

説明:

(abstract)

We have been developing a CIGS detector for particle detection with high radiation tolerance. We irradiated the CIGS detector with a 132Xe^{54+} ion beam, delivering a total ionizing dose (TID) of 0.6MGy at the HIMAC, and confirmed the recovery of leakage current and collected charge from radiation damage with heat annealing. To investigate higher radiation tolerance of the CIGS semiconductor, we irradiated CIGS solar cells with a 70 MeV proton beam with a non-ionizing energy loss (NIEL) for 10^{16} neq ·MeV/cm^{2} at the RARiS. The VIn and InCu defects created by 70 MeV proton irradiation were observed by deep level transient spectroscopy (DLTS). During thermal annealing at around 100◦C, the Cu^+ and V^{−}_{Cu} ions are excited to react with defects. These ions interact with V_{In} and In_{Cu} defects, creating electrical neutrality: 2Cu^{+} + V^{2}_{In} → Cu_{2}V_{In} and 2V^{−}_{In} + In^{2+}_{Cu} → 2V_{In}In_{Cu}. By these reaction process, it is confirmed that both V_{In} and In_{Cu} defects were reduced by the thermal annealing at 130◦C for two hours.

権利情報:

キーワード: Cu(In, Ga)Se2, High radiation tolerance detector, HIMAC, DLTS

刊行年月日: 2025-06-01

出版者: IOP Publishing

掲載誌:

  • Journal of Instrumentation (ISSN: 17480221) vol. 20 issue. 06

研究助成金:

  • JSPS KAKENHI 21K18635
  • JSPS KAKENHI 23H01191
  • JSPS KAKENHI 23K25887
  • Research ProjectwithHeavyIonsatNIRS-HIMAC 21H455

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6080

公開URL: https://doi.org/10.1088/1748-0221/20/06/c06023

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更新時刻: 2025-12-26 10:12:43 +0900

MDRでの公開時刻: 2026-06-17 08:52:03 +0900

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