説明:
(abstract)We have been developing a CIGS detector for particle detection with high radiation tolerance. We irradiated the CIGS detector with a 132Xe^{54+} ion beam, delivering a total ionizing dose (TID) of 0.6MGy at the HIMAC, and confirmed the recovery of leakage current and collected charge from radiation damage with heat annealing. To investigate higher radiation tolerance of the CIGS semiconductor, we irradiated CIGS solar cells with a 70 MeV proton beam with a non-ionizing energy loss (NIEL) for 10^{16} neq ·MeV/cm^{2} at the RARiS. The VIn and InCu defects created by 70 MeV proton irradiation were observed by deep level transient spectroscopy (DLTS). During thermal annealing at around 100◦C, the Cu^+ and V^{−}_{Cu} ions are excited to react with defects. These ions interact with V_{In} and In_{Cu} defects, creating electrical neutrality: 2Cu^{+} + V^{2}_{In} → Cu_{2}V_{In} and 2V^{−}_{In} + In^{2+}_{Cu} → 2V_{In}In_{Cu}. By these reaction process, it is confirmed that both V_{In} and In_{Cu} defects were reduced by the thermal annealing at 130◦C for two hours.
権利情報:
This is the Accepted Manuscript version of an article accepted for publication in Journal of Instrumentation. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1748-0221/20/06/C06023.
キーワード: Cu(In, Ga)Se2, High radiation tolerance detector, HIMAC, DLTS
刊行年月日: 2025-06-01
出版者: IOP Publishing
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.6080
公開URL: https://doi.org/10.1088/1748-0221/20/06/c06023
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更新時刻: 2025-12-26 10:12:43 +0900
MDRでの公開時刻: 2026-06-17 08:52:03 +0900
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