Journal article Development of high radiation tolerance detector with CIGS
K. Itabashi (author) (Search by this author)
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M. Togawa (author) (Search by this author)
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J. Nishinaga (author) (Search by this author)
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M. Miyahara (author) (Search by this author)
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H. Okumura (author) (Search by this author)
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T. Isobe (author) (Search by this author)
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Citation
K. Itabashi, M. Togawa, J. Nishinaga, M. Miyahara, H. Okumura, M. Imura, T. Isobe. Development of high radiation tolerance detector with CIGS. Journal of Instrumentation. 2025, 20 (06), . https://doi.org/10.1088/1748-0221/20/06/c06023

Description:

(abstract)

We have been developing a CIGS detector for particle detection with high radiation tolerance. We irradiated the CIGS detector with a 132Xe^{54+} ion beam, delivering a total ionizing dose (TID) of 0.6MGy at the HIMAC, and confirmed the recovery of leakage current and collected charge from radiation damage with heat annealing. To investigate higher radiation tolerance of the CIGS semiconductor, we irradiated CIGS solar cells with a 70 MeV proton beam with a non-ionizing energy loss (NIEL) for 10^{16} neq ·MeV/cm^{2} at the RARiS. The VIn and InCu defects created by 70 MeV proton irradiation were observed by deep level transient spectroscopy (DLTS). During thermal annealing at around 100◦C, the Cu^+ and V^{−}_{Cu} ions are excited to react with defects. These ions interact with V_{In} and In_{Cu} defects, creating electrical neutrality: 2Cu^{+} + V^{2}_{In} → Cu_{2}V_{In} and 2V^{−}_{In} + In^{2+}_{Cu} → 2V_{In}In_{Cu}. By these reaction process, it is confirmed that both V_{In} and In_{Cu} defects were reduced by the thermal annealing at 130◦C for two hours.

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Keyword: Cu(In, Ga)Se2, High radiation tolerance detector, HIMAC, DLTS

Date published: 2025-06-01

Publisher: IOP Publishing

Journal:

  • Journal of Instrumentation (ISSN: 17480221) vol. 20 issue. 06

Funding:

  • JSPS KAKENHI 21K18635
  • JSPS KAKENHI 23H01191
  • JSPS KAKENHI 23K25887
  • Research ProjectwithHeavyIonsatNIRS-HIMAC 21H455

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6080

First published URL: https://doi.org/10.1088/1748-0221/20/06/c06023

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Updated at: 2025-12-26 10:12:43 +0900

Published on MDR: 2026-06-17 08:52:03 +0900

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