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説明:

We demonstrate improved ohmic contact on n-type AlN using Zr/Al/Mo/Au metal stack with contact resistivities of ~10-3 Ω⋅cm2 at 25°C and ~10-5 Ω⋅cm2 at 500°C, which is over one and two orders of magnitude lower than Ti-based contacts, respectively. Temperature-dependent I-V characteristics reveal thermionic-field emission-dominated transport at the Zr/AlN interface, leading to improved conductivity and ohmic behavior above 400°C. Record-low specific on-resistance (Ron,sp) is achieved here using Zr-based cathode among all lateral AlN Schottky barrier diodes at comparable breakdown voltages. The devices reveal 10× enhanced Baliga Figure of Merit at 300°C and 500°C due to significantly lowered Ron,sp < 50 mΩ⋅cm2.

権利情報:

• In Copyright
  

  © 2026 IEEE.  Personal use of this material is permitted.  Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

キーワード: AlN, Zr-based ohmic contact, High-Temperature Electronics, High-temperature electronics, Schottky barrier diode

刊行年月日: 2026-04-20

出版者: National Institute for Materials Science

掲載誌:

• IEEE Electron Device Letters (ISSN: 07413106) vol. 47 issue. 6 p. 1077-1080

研究助成金:

• U.S. Army Research Office (ARO)/The Ohio State University SPC-1000007046
• U.S. Army Research Office (ARO)/The Ohio State University GR129057
• U.S. Army Research Laboratory (ARL) and ARO W911NF2320057
• Wallenberg Foundation KAW2023.0471
• Air Force Office of Scientific Research FA9550-22-1-0367
• the Japan Society for the Promotion of Science (JSPS)/KAKENHI 23K26556
• the Japan Society for the Promotion of Science (JSPS)/KAKENHI 25K01297

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6346

公開URL: https://doi.org/10.1109/led.2026.3685167

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更新時刻: 2026-06-19 13:22:46 +0900

MDRでの公開時刻: 2026-06-19 14:29:52 +0900