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We demonstrate improved ohmic contact on n-type AlN using Zr/Al/Mo/Au metal stack with contact resistivities of ~10-3 Ω⋅cm2 at 25°C and ~10-5 Ω⋅cm2 at 500°C, which is over one and two orders of magnitude lower than Ti-based contacts, respectively. Temperature-dependent I-V characteristics reveal thermionic-field emission-dominated transport at the Zr/AlN interface, leading to improved conductivity and ohmic behavior above 400°C. Record-low specific on-resistance (Ron,sp) is achieved here using Zr-based cathode among all lateral AlN Schottky barrier diodes at comparable breakdown voltages. The devices reveal 10× enhanced Baliga Figure of Merit at 300°C and 500°C due to significantly lowered Ron,sp < 50 mΩ⋅cm2.

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Keyword: AlN, Zr-based ohmic contact, High-Temperature Electronics, High-temperature electronics, Schottky barrier diode

Date published: 2026-04-20

Publisher: National Institute for Materials Science

Journal:

• IEEE Electron Device Letters (ISSN: 07413106) vol. 47 issue. 6 p. 1077-1080

Funding:

• U.S. Army Research Office (ARO)/The Ohio State University SPC-1000007046
• U.S. Army Research Office (ARO)/The Ohio State University GR129057
• U.S. Army Research Laboratory (ARL) and ARO W911NF2320057
• Wallenberg Foundation KAW2023.0471
• Air Force Office of Scientific Research FA9550-22-1-0367
• the Japan Society for the Promotion of Science (JSPS)/KAKENHI 23K26556
• the Japan Society for the Promotion of Science (JSPS)/KAKENHI 25K01297

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6346

First published URL: https://doi.org/10.1109/led.2026.3685167

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Updated at: 2026-06-19 13:22:46 +0900

Published on MDR: 2026-06-19 14:29:52 +0900