29 records found.
Charge Transfer-Induced Weakening of Vibronic Coupling for Single Terrylene Molecules Adsorbed onto Hexagonal Boron Nitride
- Journal article
- Creator
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Titus de Haas (author) (Search by this author)
https://orcid.org/0000-0002-2206-3219
(unauthenticated)
;
Robert Smit (author) (Search by this author)
https://orcid.org/0000-0003-2576-4851
(unauthenticated)
;
Arash Tebyani (author) (Search by this author)
https://orcid.org/0000-0001-8086-0067
(unauthenticated)
;
Semonti Bhattacharyya (author) (Search by this author)
https://orcid.org/0000-0003-3387-0531
(unauthenticated)
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Francesco Buda (author) (Search by this author)
https://orcid.org/0000-0002-7157-7654
(unauthenticated)
;
Michel Orrit (author) (Search by this author)
https://orcid.org/0000-0002-3607-3426
(unauthenticated)
- Keyword
- Fluorescence spectra, terrylene molecules, hexagonal boron nitride
- Date published
- 2025-01-09
- Updated at
- 2025-02-05 12:30:08 +0900
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
- Journal article
- Creator
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Takuya Iwasaki (author) (Search by this author)National Institute for Materials Science
;
;Yoshifumi Morita (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
- Keyword
- bilayer graphene, hexagonal boron nitride, heterostructure, valley Hall effect
- Date published
- 2024-02-08
- Updated at
- 2025-01-10 16:31:45 +0900
[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility
- Magazine
- Collection
- Research Highlights
- Creator
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)National Institute for Materials Science
- Keyword
- diamond, field-effect transistor, hexagonal boron nitride, mobility, hydrogen-terminated, wide bandgap, hBN, graphite, hBN/h-BN
- Date published
- 2022-07-29
- Updated at
- 2023-12-26 21:47:16 +0900
[Research Highlights Vol.69] Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication
- Magazine
- Collection
- Research Highlights
- Creator
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)National Institute for Materials Science
- Keyword
- density functional theory, germanene, graphene, hexagonal boron nitride, Raman spectroscopy, van der Waals materials, Ag(111), silicene
- Date published
- 2021-07-15
- Updated at
- 2023-12-26 21:46:24 +0900
[Research Highlights Vol.61] First Fabrication of fBBLG/hBN Superlattices
- Magazine
- Collection
- Research Highlights
- Creator
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)National Institute for Materials Science
- Keyword
- two-dimensional material, van der Waals heterostructure, graphene, hexagonal boron nitride, moiré superlattice, transport property
- Date published
- 2020-08-26
- Updated at
- 2023-12-26 21:47:57 +0900
All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping?
- Journal article
- Creator
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;Lukas Renn (author) (Search by this author);Lisa S. Walter (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
R. Thomas Weitz (author) (Search by this author)
- Keyword
- Charge transport, organic semiconducting crystals, hexagonal boron nitride
- Date published
- 2022-01-29
- Updated at
- 2025-02-26 08:30:49 +0900
Systematic investigation of dynamic nuclear polarization with boron vacancy in hexagonal boron nitride
- Journal article
- Creator
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;Yuki Nakamura (author) (Search by this author);Shunsuke Nishimura (author) (Search by this author)Takuya Iwasaki (author) (Search by this author)National Institute for Materials Science
;
Shu Nakaharai (author) (Search by this author)
https://orcid.org/0000-0002-6329-3942
(unauthenticated)
National Institute for Materials Science
;
;Shinichi Ogawa (author) (Search by this author);Yukinori Morita (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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;Kento Sasaki (author) (Search by this author)Kensuke Kobayashi (author) (Search by this author)
- Keyword
- vacancy, optically detected magnetic resonance, dynamic nuclear polarization, hexagonal boron nitride
- Date published
- 2025-05-02
- Updated at
- 2025-05-22 12:30:18 +0900
Systematic characterization of nanoscale -BN quantum sensor spots created by helium-ion microscopy
- Journal article
- Creator
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;Hao Gu (author) (Search by this author)Moeta Tsukamoto (author) (Search by this author)
https://orcid.org/0000-0002-0708-6308
(unauthenticated)
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Yuki Nakamura (author) (Search by this author)
https://orcid.org/0000-0002-9038-468X
(unauthenticated)
;
Shu Nakaharai (author) (Search by this author)
https://orcid.org/0000-0002-6329-3942
(unauthenticated)
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Takuya Iwasaki (author) (Search by this author)
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Kenji Watanabe (author) (Search by this author)
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Takashi Taniguchi (author) (Search by this author)
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;Shinichi Ogawa (author) (Search by this author);Yukinori Morita (author) (Search by this author)Kento Sasaki (author) (Search by this author)
https://orcid.org/0000-0002-5880-2116
(unauthenticated)
;
Kensuke Kobayashi (author) (Search by this author)
https://orcid.org/0000-0001-7072-5945
(unauthenticated)
- Keyword
- quantum sensor, hexagonal boron nitride, helium ion microscopy
- Date published
- 2024-11-12
- Updated at
- 2025-01-09 16:30:55 +0900
Current-induced brightening of vacancy-related emitters in hexagonal boron nitride
- Journal article
- Creator
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;Corinne Steiner (author) (Search by this author);Rebecca Rahmel (author) (Search by this author);Frank Volmer (author) (Search by this author);Rika Windisch (author) (Search by this author);Lars H. Janssen (author) (Search by this author);Patricia Pesch (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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;Florian Libisch (author) (Search by this author);Bernd Beschoten (author) (Search by this author);Christoph Stampfer (author) (Search by this author)Annika Kurzmann (author) (Search by this author)
- Keyword
- hexagonal boron nitride, vacancy-related emitters , photoluminescence
- Date published
- 2025-08-19
- Updated at
- 2026-02-16 16:31:11 +0900
Dielectric strength weakening of hexagonal boron nitride nanosheets under mechanical stress
- Journal article
- Creator
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;Bingjie Wang (author) (Search by this author);Chuanli Yu (author) (Search by this author);Yifan Jiang (author) (Search by this author);Chong Tian (author) (Search by this author);Jiamin Tian (author) (Search by this author);Shuo Li (author) (Search by this author);Zheng Fang (author) (Search by this author);Menglan Li (author) (Search by this author);Weilong Wu (author) (Search by this author);Zhaohe Dai (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
;Qing Chen (author) (Search by this author)Xianlong Wei (author) (Search by this author)
- Keyword
- hexagonal boron nitride, dielectric strength , mechanical stress
- Date published
- 2025-08-29
- Updated at
- 2026-02-17 08:30:11 +0900