Keyword: GaN

8 records found.

GaN_H2O.jpg
Continuous real-time O 1s core XPS spectra of H2O adsorption on +c Ga-face and m-plane surfaces of GaN
Dataset
Creator
SUMIYA, Masatomo (author) (Search by this author)
ORCID SAMURAI
Keyword
GaN, Gallium nitride, Surface oxidation, Oxidation, MOS structure, XPS, SPring-8
Date published
2022-12-31
Updated at
2024-01-05 22:11:14 +0900

GaN_O2.jpg
Continuous real-time O 1s core XPS spectra of initial O2 molecule adsorption on polar and m-plane surfaces of GaN
Dataset
Creator
SUMIYA, Masatomo (author) (Search by this author)
ORCID SAMURAI
Keyword
GaN, Gallium nitride, Oxidation, Adsorption, XPS, SPring-8
Date published
2020-11-19
Updated at
2024-01-05 22:13:22 +0900

JAP135(2024)185701_GaNMGRCWalukiewiczTribute.pdf
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
Journal article
Creator
Shigefusa F. Chichibu (author) (Search by this author)
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
;
Kohei Shima (author) (Search by this author)
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
;
Akira Uedono (author) (Search by this author)
Department of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
;
Shoji Ishibashi (author) (Search by this author)
AIST
;
Hiroko Iguchi (author) (Search by this author)
TOYOTA CENTRAL R&D LABS., INC.
;
Tetsuo Narita (author) (Search by this author)
TOYOTA CENTRAL R&D LABS., INC.
;
Keita Kataoka (author) (Search by this author)
TOYOTA CENTRAL R&D LABS., INC.
;
Ryo Tanaka (author) (Search by this author)
Fuji Electric Corporation
;
Shinya Takashima (author) (Search by this author)
Fuji Electric Corporation
;
Katsunori Ueno (author) (Search by this author)
Fuji Electric Corporation
;
Masaharu Edo (author) (Search by this author)
Fuji Electric Corporation
;
Hirotaka Watanabe (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Atsushi Tanaka (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Yoshio Honda (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Jun Suda (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Hiroshi Amano (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Tetsu Kachi (author) (Search by this author)
Institute of Materials and Systems for Sustainability, Nagoya University
;
Toshihide Nabatame (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
Yasuo Koide (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
GaN
Date published
2024-05-14
Updated at
2024-05-09 16:30:16 +0900

dfac008.pdf
Classification for transmission electron microscope images from different amorphous states using persistent homology
Journal article
Creator
Fumihiko Uesugi (author) (Search by this author)
ORCID SAMURAI ;
Masashi Ishii (author) (Search by this author)
ORCID SAMURAI
Keyword
TEM image simulation, GaN, persistent homology, Amorphous structure
Date published
2022-06-06
Updated at
2024-07-04 16:32:11 +0900

Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_085003.pdf
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
Journal article
Creator
Yoshihiro Irokawa (author) (Search by this author)
ORCID SAMURAI ;
Toshihide Nabatame (author) (Search by this author)
ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
National Institute for Materials Science
;
Manami Miyamoto (author) (Search by this author)
;
Hiromi Miura (author) (Search by this author)
;
Kazuhito Tsukagoshi (author) (Search by this author)
ORCID SAMURAI ;
Yasuo Koide (author) (Search by this author)
ORCID SAMURAI
Keyword
GaN
Date published
2024-08-01
Updated at
2024-09-02 12:30:27 +0900

Hamachi 2024 JAP GaN dislocation nanoXRD Na-flux HVPE MDR.pdf
Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
Journal article
Creator
T. Hamachi (author) (Search by this author)
ORCID ;
T. Tohei (author) (Search by this author)
ORCID ; ORCID SAMURAI ;
S. Usami (author) (Search by this author)
ORCID ;
M. Imanishi (author) (Search by this author)
;
Y. Mori (author) (Search by this author)
;
K. Sumitani (author) (Search by this author)
;
Y. Imai (author) (Search by this author)
ORCID ;
S. Kimura (author) (Search by this author)
ORCID ;
A. Sakai (author) (Search by this author)
ORCID
Keyword
GaN, Dislocation, SPring-8
Date published
2024-06-14
Updated at
2024-12-05 12:47:52 +0900

Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_045002.pdf
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
Journal article
Creator
色川 芳宏 (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
大井 暁彦 (author) (Search by this author)
Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit, National Institute for Materials Science
ORCID SAMURAI ;
生田目 俊秀 (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID SAMURAI ;
小出 康夫 (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
GaN, hydrogen, Schottky barrier height
Date published
2024-04-01
Updated at
2024-04-10 16:30:21 +0900